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Study of charge carrier quantization in strained Si-nMOSFETs

Nguyen, C. D. / Pham, A. T. / Jungemann, C. / Meinerzhagen, B.

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Study of charge carrier quantization in strained Si-nMOSFETs

Nguyen, C. D. / Pham, A. T. / Jungemann, C. / Meinerzhagen, B.

Study of charge carrier quantization in strained Si-nMOSFETs

Nguyen, C. D. / Pham, A. T. / Jungemann, C. / Meinerzhagen, B.

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Check availability in my library

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Document information

Title:

Study of charge carrier quantization in strained Si-nMOSFETs

Contributors:

Nguyen, C. D. (author) / Pham, A. T. (author) / Jungemann, C. (author) / Meinerzhagen, B. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 363-366

Publication date:

2005-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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