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    Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering

    New search for: Lee, S.Y.
    New search for: Choi, K.H.
    New search for: Kang, H.C.

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    Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering

    New search for: Lee, S.Y.
    New search for: Choi, K.H.
    New search for: Kang, H.C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering

    New search for: Lee, S.Y.
    New search for: Choi, K.H.
    New search for: Kang, H.C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering

    Contributors:

    Lee, S.Y. (author) / Choi, K.H. (author) / Kang, H.C. (author)

    Published in:

    MATERIALS LETTERS ; 176 ; 213-218

    Publication date:

    2016-01-01

    Size:

    6 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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