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    Growth of GaN nanowires through nitridation Ga2O3 films deposited by electrophoresis

    New search for: Xue, C.
    New search for: Yang, L.
    New search for: Wang, C.
    New search for: Zhuang, H.

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    Growth of GaN nanowires through nitridation Ga2O3 films deposited by electrophoresis

    New search for: Xue, C.
    New search for: Yang, L.
    New search for: Wang, C.
    New search for: Zhuang, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth of GaN nanowires through nitridation Ga2O3 films deposited by electrophoresis

    New search for: Xue, C.
    New search for: Yang, L.
    New search for: Wang, C.
    New search for: Zhuang, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Growth of GaN nanowires through nitridation Ga2O3 films deposited by electrophoresis

    Contributors:

    Xue, C. (author) / Yang, L. (author) / Wang, C. (author) / Zhuang, H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 217 ; 78-81

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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