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Highly uniform switching of HfO2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage
Highly uniform switching of HfO2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage
Highly uniform switching of HfO2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage
Qi, Meng (author) / Tao, Ye (author) / Wang, Zhongqiang (author) / Xu, Haiyang (author) / Zhao, Xiaoning (author) / Liu, Weizhen (author) / Ma, Jiangang (author) / Liu, Yichun (author)
Applied surface science ; 458 ; 216-221
2018-01-01
6 pages
Article (Journal)
English
DDC:
620.44
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