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    Study of oxide trapping in SiC MOSFETs by means of TCAD simulations

    New search for: Miccoli, Cristina
    New search for: Iucolano, Ferdinando

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    Study of oxide trapping in SiC MOSFETs by means of TCAD simulations

    New search for: Miccoli, Cristina
    New search for: Iucolano, Ferdinando

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Study of oxide trapping in SiC MOSFETs by means of TCAD simulations

    New search for: Miccoli, Cristina
    New search for: Iucolano, Ferdinando

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Study of oxide trapping in SiC MOSFETs by means of TCAD simulations

    Contributors:

    Miccoli, Cristina (author) / Iucolano, Ferdinando (author)

    Published in:

    Materials science in semiconductor processing ; 97 ; 40-43

    Publication date:

    2019-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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