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Radial p-n junction macroporous silicon solar cell on p-type upgraded metallurgical-grade silicon substrate

Zhao, L. / Li, Z. C. / Diao, H. W. / Li, H. L. / Zhou, C. L. / Wang, W. J.

Macroporous silicon was fabricated on p-type upgraded metallurgical-grade (UMG) c-Si substrate with the resistivity of about 0.1–3 Ω cm, by metal-catalyzed electrochemical etching (MCECE). Ag nanoparticle catalyst was first fabricated on the c-Si substrate. Then, the electrochemical etching was performed. By optimizing the MCECE processes carefully, the macroporous silicon was successfully obtained with the pore width up to about 400 nm and the pore depth of 2–5 μm. After that, the radial amorphous/crystalline silicon heterojunction (SHJ) structure was prepared by conformally depositing a-Si:H i-layer and n-layer on the macroporous silicon via plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, followed by depositing indium tin oxide front contact and Ag back contact via magnetron sputtering and thermal evaporation, respectively. As a result, the demonstrated radial p-n junction macroporous silicon solar cell with the unoptimized SHJ structure gave out a conversion efficiency of 3.67&percent; under the standard AM1.5 illumination, which indicated a potential to make high performance radial p-n junction solar cell on UMG c-Si substrate.

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Radial p-n junction macroporous silicon solar cell on p-type upgraded metallurgical-grade silicon substrate

Zhao, L. / Li, Z. C. / Diao, H. W. / Li, H. L. / Zhou, C. L. / Wang, W. J.

Macroporous silicon was fabricated on p-type upgraded metallurgical-grade (UMG) c-Si substrate with the resistivity of about 0.1–3 Ω cm, by metal-catalyzed electrochemical etching (MCECE). Ag nanoparticle catalyst was first fabricated on the c-Si substrate. Then, the electrochemical etching was performed. By optimizing the MCECE processes carefully, the macroporous silicon was successfully obtained with the pore width up to about 400 nm and the pore depth of 2–5 μm. After that, the radial amorphous/crystalline silicon heterojunction (SHJ) structure was prepared by conformally depositing a-Si:H i-layer and n-layer on the macroporous silicon via plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, followed by depositing indium tin oxide front contact and Ag back contact via magnetron sputtering and thermal evaporation, respectively. As a result, the demonstrated radial p-n junction macroporous silicon solar cell with the unoptimized SHJ structure gave out a conversion efficiency of 3.67&percent; under the standard AM1.5 illumination, which indicated a potential to make high performance radial p-n junction solar cell on UMG c-Si substrate.

Radial p-n junction macroporous silicon solar cell on p-type upgraded metallurgical-grade silicon substrate

Zhao, L. / Li, Z. C. / Diao, H. W. / Li, H. L. / Zhou, C. L. / Wang, W. J.

Macroporous silicon was fabricated on p-type upgraded metallurgical-grade (UMG) c-Si substrate with the resistivity of about 0.1–3 Ω cm, by metal-catalyzed electrochemical etching (MCECE). Ag nanoparticle catalyst was first fabricated on the c-Si substrate. Then, the electrochemical etching was performed. By optimizing the MCECE processes carefully, the macroporous silicon was successfully obtained with the pore width up to about 400 nm and the pore depth of 2–5 μm. After that, the radial amorphous/crystalline silicon heterojunction (SHJ) structure was prepared by conformally depositing a-Si:H i-layer and n-layer on the macroporous silicon via plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, followed by depositing indium tin oxide front contact and Ag back contact via magnetron sputtering and thermal evaporation, respectively. As a result, the demonstrated radial p-n junction macroporous silicon solar cell with the unoptimized SHJ structure gave out a conversion efficiency of 3.67&percent; under the standard AM1.5 illumination, which indicated a potential to make high performance radial p-n junction solar cell on UMG c-Si substrate.

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Title:

Radial p-n junction macroporous silicon solar cell on p-type upgraded metallurgical-grade silicon substrate

Contributors:

Zhao, L. (author) / Li, Z. C. (author) / Diao, H. W. (author) / Li, H. L. (author) / Zhou, C. L. (author) / Wang, W. J. (author)

Published in:

Journal of Renewable and Sustainable Energy ; 4 ; 063108-

Publication date:

2012-11-01

Size:

8 pages

ISSN:

DOI:

https://doi.org/10.1063/1.4766885

Type of media:

Article (Journal)

Type of material:

Electronic Resource

Language:

English

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