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Analysis of HCl etch pits on zinc-sulfide crystal; alternating layer structure yields different end photographs taken by G.Nomarski's interference contrast method; "angular" etch pits for zinc end and "rounded" etch pits for sulfide end were determined by analogy with X-ray analysis of GaAs done by White and Roth.
Analysis of HCl etch pits on zinc-sulfide crystal; alternating layer structure yields different end photographs taken by G.Nomarski's interference contrast method; "angular" etch pits for zinc end and "rounded" etch pits for sulfide end were determined by analogy with X-ray analysis of GaAs done by White and Roth.
Etch pits on zinc-sulphide crystal
Philips Tech Rev
Eland, A.J. (author)
1962
3 pages
Article (Journal)
English
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