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Oxide sintered body and tablet obtained by processing same
Provided are: a tablet for ion plating, which is capable of forming a transparent conductive film suitable for solar cells at a high rate, and which enables continuous film formation without causing cracks, breaking or splashes; and an oxide sintered body for obtaining the tablet for ion plating, which is mainly composed of indium oxide and contains a specific amount of tin as an additional element. An oxide sintered body which is mainly composed of indium oxide and contains tin as an additional element so that the tin content is 0.001-0.15 in terms of the Sn/(In+Sn) atomic ratio. This oxide sintered body is characterized by being mainly configured of crystal grains (A), each of which has a tin content less than the average tin content of the oxide sintered body, and crystal grains (B), each of which has a tin content not less than the average tin content of the oxide sintered body. This oxide sintered body is also characterized in that: the difference between the average tin content of the crystal grains (B) and the average tin content of the crystal grains (A) is 0.015 or more in terms of the Sn/(In+Sn) atomic ratio; and the density is 3.4-5.5 g/cm<3>.
Oxide sintered body and tablet obtained by processing same
Provided are: a tablet for ion plating, which is capable of forming a transparent conductive film suitable for solar cells at a high rate, and which enables continuous film formation without causing cracks, breaking or splashes; and an oxide sintered body for obtaining the tablet for ion plating, which is mainly composed of indium oxide and contains a specific amount of tin as an additional element. An oxide sintered body which is mainly composed of indium oxide and contains tin as an additional element so that the tin content is 0.001-0.15 in terms of the Sn/(In+Sn) atomic ratio. This oxide sintered body is characterized by being mainly configured of crystal grains (A), each of which has a tin content less than the average tin content of the oxide sintered body, and crystal grains (B), each of which has a tin content not less than the average tin content of the oxide sintered body. This oxide sintered body is also characterized in that: the difference between the average tin content of the crystal grains (B) and the average tin content of the crystal grains (A) is 0.015 or more in terms of the Sn/(In+Sn) atomic ratio; and the density is 3.4-5.5 g/cm<3>.
Oxide sintered body and tablet obtained by processing same
NAKAYAMA TOKUYUKI (author)
2015-04-08
Patent
Electronic Resource
English
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