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BaTiO3 based lead-free PTC thermistor ceramic material added with SiO2 and having high Curie point and preparation method thereof
The invention discloses a BaTiO3 based lead-free PTC thermistor ceramic material added with SiO2 and having a high Curie point and a preparation method thereof. The preparation method comprises the following steps: mixing Bi2O3, K2CO3 and TiO2 to form a mixture B; ball milling, drying and briquetting the mixture B, and maintaining the temperature to obtain pure phase Bi0.5K0.5TiO3 powder; weighing and mixing BaTiO3 powder, Bi0.5K0.5TiO3 powder and auxiliary materials Nb2O5 and SiO2 according to molar composition to form a mixture; ball milling, drying and briquetting the mixture to form a granulated material; and pressing the granulated material into a test specimen, and sintering the test specimen in argon atmosphere. The argon atmosphere sintering process and the trace semiconducting element doping process are adopted to solve the semiconducting problem of the PTC thermistor ceramic material at room temperature, moreover the preparation process is simple, the material cost is low, the prepared thermistor is lead-free, thereby being environment-friendly; the thermistor has low room temperature resistance and large resistance kick.
BaTiO3 based lead-free PTC thermistor ceramic material added with SiO2 and having high Curie point and preparation method thereof
The invention discloses a BaTiO3 based lead-free PTC thermistor ceramic material added with SiO2 and having a high Curie point and a preparation method thereof. The preparation method comprises the following steps: mixing Bi2O3, K2CO3 and TiO2 to form a mixture B; ball milling, drying and briquetting the mixture B, and maintaining the temperature to obtain pure phase Bi0.5K0.5TiO3 powder; weighing and mixing BaTiO3 powder, Bi0.5K0.5TiO3 powder and auxiliary materials Nb2O5 and SiO2 according to molar composition to form a mixture; ball milling, drying and briquetting the mixture to form a granulated material; and pressing the granulated material into a test specimen, and sintering the test specimen in argon atmosphere. The argon atmosphere sintering process and the trace semiconducting element doping process are adopted to solve the semiconducting problem of the PTC thermistor ceramic material at room temperature, moreover the preparation process is simple, the material cost is low, the prepared thermistor is lead-free, thereby being environment-friendly; the thermistor has low room temperature resistance and large resistance kick.
BaTiO3 based lead-free PTC thermistor ceramic material added with SiO2 and having high Curie point and preparation method thereof
PU YONGPING (author) / ZHAO JIAOJIAO (author)
2015-05-13
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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