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Lead-free high curie point PTC ceramic material and preparation method thereof
The invention relates to a lead-free high curie point PTC ceramic material and a preparation method thereof, the lead-free high curie point PTC ceramic material is sintered in a quantitative weak oxidation low oxygen partial pressure atmosphere, grain semiconduction and grain boundary potential barrier construction are integrated in the same process, a subsequent oxidation treatment process is not needed, the process flow is shortened, and the material preparation repeatability is improved. The prepared PTC ceramic material does not contain lead element, has a high Curie temperature point of 150-195 DEG C, a high lift-drag ratio of 3-6, a low room temperature resistance of 10-1000 ohm and a high resistance temperature coefficient of more than or equal to 30%/DEG C, has excellent comprehensive performance, is suitable for practical production and manufacturing, and has high market application value.
本发明涉及一种无铅高居里点PTC陶瓷材料及其制备方法，无铅高居里点PTC陶瓷材料在定量化的弱氧化低氧分压气氛中烧结，将晶粒半导和晶界势垒构建集中于同一工序，无需后续氧化处理工艺，缩减工艺流程，且提高了材料制备重复性。所制备的PTC陶瓷材料不含铅元素，具有高居里温度点150‑195℃，高升阻比3～6，低室温电阻10‑1000Ω，高电阻温度系数≥30％/℃，材料综合性能优异，适合实用化生产制造，具有较高的市场应用价值。
Lead-free high curie point PTC ceramic material and preparation method thereof
The invention relates to a lead-free high curie point PTC ceramic material and a preparation method thereof, the lead-free high curie point PTC ceramic material is sintered in a quantitative weak oxidation low oxygen partial pressure atmosphere, grain semiconduction and grain boundary potential barrier construction are integrated in the same process, a subsequent oxidation treatment process is not needed, the process flow is shortened, and the material preparation repeatability is improved. The prepared PTC ceramic material does not contain lead element, has a high Curie temperature point of 150-195 DEG C, a high lift-drag ratio of 3-6, a low room temperature resistance of 10-1000 ohm and a high resistance temperature coefficient of more than or equal to 30%/DEG C, has excellent comprehensive performance, is suitable for practical production and manufacturing, and has high market application value.
本发明涉及一种无铅高居里点PTC陶瓷材料及其制备方法，无铅高居里点PTC陶瓷材料在定量化的弱氧化低氧分压气氛中烧结，将晶粒半导和晶界势垒构建集中于同一工序，无需后续氧化处理工艺，缩减工艺流程，且提高了材料制备重复性。所制备的PTC陶瓷材料不含铅元素，具有高居里温度点150‑195℃，高升阻比3～6，低室温电阻10‑1000Ω，高电阻温度系数≥30％/℃，材料综合性能优异，适合实用化生产制造，具有较高的市场应用价值。
Lead-free high curie point PTC ceramic material and preparation method thereof
一种无铅高居里点PTC陶瓷材料及其制备方法
DING WEIHUA (author) / OU YANGQI (author) / YE SHENG (author) / CHEN JING (author) / CHEN YANGCHUN (author) / XIONG CHEN (author) / ZHANG ZHEN (author)
2024-12-27
Patent
Electronic Resource
Chinese
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