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Preparation method of highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film
The invention relates to a preparation method of a highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film. The preparation method comprises the following steps: (1) preparing a sodium bismuth titanate-barium titanate precursor solution; (2) sputtering lanthanum nickelate on a Pt/Ti/SiO2/Si substrate and performing heat treatment at 700 DEG C for 30 minutes; (3) cleaning and drying the substrate with the lanthanum nickelate; (4) performing spin-coating on the substrate obtained in the step (3) by use of the sodium bismuth titanate-barium titanate precursor solution layer by layer until the thin film of the desired thickness is obtained; (5) performing annealing treatment on the thin film obtained in the step (4) at 700 DEG C for 120 minutes, thereby obtaining the highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film. The highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film prepared by use of the method is high in degree of orientation, has relatively high electrostrictive strain, a relatively high dielectric constant and relatively low dielectric loss under a low electric field, and has favorable application prospect in the fields of high-precision displacement controllers, micro-actuators and the like.
Preparation method of highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film
The invention relates to a preparation method of a highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film. The preparation method comprises the following steps: (1) preparing a sodium bismuth titanate-barium titanate precursor solution; (2) sputtering lanthanum nickelate on a Pt/Ti/SiO2/Si substrate and performing heat treatment at 700 DEG C for 30 minutes; (3) cleaning and drying the substrate with the lanthanum nickelate; (4) performing spin-coating on the substrate obtained in the step (3) by use of the sodium bismuth titanate-barium titanate precursor solution layer by layer until the thin film of the desired thickness is obtained; (5) performing annealing treatment on the thin film obtained in the step (4) at 700 DEG C for 120 minutes, thereby obtaining the highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film. The highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film prepared by use of the method is high in degree of orientation, has relatively high electrostrictive strain, a relatively high dielectric constant and relatively low dielectric loss under a low electric field, and has favorable application prospect in the fields of high-precision displacement controllers, micro-actuators and the like.
Preparation method of highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film
ZHAI JIWEI (author) / LI PENG (author) / SHEN BO (author) / LI WEI (author)
2015-05-13
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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