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Bismuth ferrite-barium titanate lead-free piezoelectric ceramic material and preparation method thereof
The invention belongs to the technical field of piezoelectric ceramics, and discloses a bismuth ferrite-barium titanate lead-free piezoelectric ceramic material and a preparation method thereof. The piezoelectric ceramic is composed of 0.7% of Bi < 1.02 > FeO < 3 >-0.3% of BaTiO < 3 >, x% of LiF, y% of M and z% of SiO2, m represents a Mn-containing metal compound; x, y and z respectively represent the molar fractions of LiF, M and SiO2, 0.25 < = x < = 0.75, 0.35 < = y < = 0.75, and 0 < = z < = 0.3. The invention also discloses a preparation method of the piezoelectric ceramic. The oxygen vacancy concentration in crystal lattices is regulated and controlled, crystal lattice distortion is strengthened, the microstructure is improved, and the piezoelectricity and the Curie temperature are obviously improved. The piezoelectric ceramic material disclosed by the invention is wide in sintering temperature range (880-1020 DEG C), high in piezoelectric constant (d33 = 180-208pC/N) and high in Curie temperature (TC = 550 DEG C).
本发明属于压电陶瓷的技术领域，公开了一种铁酸铋‑钛酸钡无铅压电陶瓷材料及制备方法。所述压电陶瓷的组成为0.7Bi1.02FeO3‑0.3BaTiO3‑x％LiF+y％M+z％SiO2；M表示含Mn金属化合物；x、y、z分别表示LiF、M和SiO2的摩尔分数，0.25≤x≤0.75，0.35≤y≤0.75，0≤z≤0.3。本发明还公开了压电陶瓷的制备方法。本发明调控了晶格中的氧空位浓度，加强晶格畸变，改善了显微结构，使压电性和居里温度均获得明显提高。本发明的压电陶瓷材料烧结温区宽(880～1020℃)、压电常数高(d33＝180～208pC/N)、居里温度高(TC＝550℃)。
Bismuth ferrite-barium titanate lead-free piezoelectric ceramic material and preparation method thereof
The invention belongs to the technical field of piezoelectric ceramics, and discloses a bismuth ferrite-barium titanate lead-free piezoelectric ceramic material and a preparation method thereof. The piezoelectric ceramic is composed of 0.7% of Bi < 1.02 > FeO < 3 >-0.3% of BaTiO < 3 >, x% of LiF, y% of M and z% of SiO2, m represents a Mn-containing metal compound; x, y and z respectively represent the molar fractions of LiF, M and SiO2, 0.25 < = x < = 0.75, 0.35 < = y < = 0.75, and 0 < = z < = 0.3. The invention also discloses a preparation method of the piezoelectric ceramic. The oxygen vacancy concentration in crystal lattices is regulated and controlled, crystal lattice distortion is strengthened, the microstructure is improved, and the piezoelectricity and the Curie temperature are obviously improved. The piezoelectric ceramic material disclosed by the invention is wide in sintering temperature range (880-1020 DEG C), high in piezoelectric constant (d33 = 180-208pC/N) and high in Curie temperature (TC = 550 DEG C).
本发明属于压电陶瓷的技术领域，公开了一种铁酸铋‑钛酸钡无铅压电陶瓷材料及制备方法。所述压电陶瓷的组成为0.7Bi1.02FeO3‑0.3BaTiO3‑x％LiF+y％M+z％SiO2；M表示含Mn金属化合物；x、y、z分别表示LiF、M和SiO2的摩尔分数，0.25≤x≤0.75，0.35≤y≤0.75，0≤z≤0.3。本发明还公开了压电陶瓷的制备方法。本发明调控了晶格中的氧空位浓度，加强晶格畸变，改善了显微结构，使压电性和居里温度均获得明显提高。本发明的压电陶瓷材料烧结温区宽(880～1020℃)、压电常数高(d33＝180～208pC/N)、居里温度高(TC＝550℃)。
Bismuth ferrite-barium titanate lead-free piezoelectric ceramic material and preparation method thereof
一种铁酸铋-钛酸钡无铅压电陶瓷材料及制备方法
HE XINHUA (author) / HE XIUJIANG (author) / LU ZHENYA (author) / WANG XIN (author)
2022-09-23
Patent
Electronic Resource
Chinese
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