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Temperature-stable high-quality factor microwave dielectric ceramic BiTa3W3O18 and preparation method thereof
The invention discloses temperature-stable high-quality factor microwave dielectric ceramic tungstate BiTa3W3O18 and a preparation method thereof. The preparation method comprises the following steps: (1) weighing and dosing the original powder of Bi2O3, Ta2O5 and WO3 with the purity of 99.9% or more according to the composition of BiTa3W3O18; (2) performing wet-type ball milling on the raw materials in the step (1), mixing for 12 hours, wherein the ball milling medium refers to distilled water, drying, and pre-sintering in an air atmosphere at the temperature of 1100 DEG C for 6 hours; and (3) adding an adhesive into the powder prepared in the step (2), granulating, pressing, molding, and finally sintering in the air atmosphere at the temperature of 1150-1200 DEG C for 4 hours, wherein the adhesive refers to 5% polyvinyl alcohol solution, and the addition amount of the polyvinyl alcohol accounts for 3 percent of the total mass of the powder. The prepared ceramic is good in sintering properties, the dielectric constant is 10.2-10.9, the quality factor Qf value is 144000-172000GHz, the resonant frequency temperature coefficient is small, and the ceramic has extremely high application value in the industry.
Temperature-stable high-quality factor microwave dielectric ceramic BiTa3W3O18 and preparation method thereof
The invention discloses temperature-stable high-quality factor microwave dielectric ceramic tungstate BiTa3W3O18 and a preparation method thereof. The preparation method comprises the following steps: (1) weighing and dosing the original powder of Bi2O3, Ta2O5 and WO3 with the purity of 99.9% or more according to the composition of BiTa3W3O18; (2) performing wet-type ball milling on the raw materials in the step (1), mixing for 12 hours, wherein the ball milling medium refers to distilled water, drying, and pre-sintering in an air atmosphere at the temperature of 1100 DEG C for 6 hours; and (3) adding an adhesive into the powder prepared in the step (2), granulating, pressing, molding, and finally sintering in the air atmosphere at the temperature of 1150-1200 DEG C for 4 hours, wherein the adhesive refers to 5% polyvinyl alcohol solution, and the addition amount of the polyvinyl alcohol accounts for 3 percent of the total mass of the powder. The prepared ceramic is good in sintering properties, the dielectric constant is 10.2-10.9, the quality factor Qf value is 144000-172000GHz, the resonant frequency temperature coefficient is small, and the ceramic has extremely high application value in the industry.
Temperature-stable high-quality factor microwave dielectric ceramic BiTa3W3O18 and preparation method thereof
FANG LIANG (author) / XIANG HUAICHENG (author) / SU HEPING (author)
2015-05-27
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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