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Method for preventing cementation in siliconized graphite preparation process by vacuum vapor deposition reaction process
The invention discloses a method for preventing cementation in a siliconized graphite preparation process by a vacuum vapor deposition reaction process. The method comprises the following steps: respectively laying anti-sticking agent layers having total thickness not less than 2.5mm between adjacent graphite base materials which are stacked up and down and between a crucible and the lowest graphite base material when graphite base materials coated with high-purity silicon and auxiliaries are put into the crucible; then, putting into a vacuum furnace to prepare siliconized graphite by means of the vacuum vapor deposition reaction process, wherein the anti-sticking agent layer is formed by sequentially laying the following three layers from bottom to top: a lower silicon carbide powder layer, an intermediate layer and an upper silicon carbide powder layer, and the intermediate layer is prepared from quartz sands or carbon powder or mixture of quartz sands and carbon powder in an arbitrary ratio. The method can be used for effectively preventing cementation, the post-treatment of siliconized graphite is easy, the number of using crucible times is increased, and rejected products are reduced.
Method for preventing cementation in siliconized graphite preparation process by vacuum vapor deposition reaction process
The invention discloses a method for preventing cementation in a siliconized graphite preparation process by a vacuum vapor deposition reaction process. The method comprises the following steps: respectively laying anti-sticking agent layers having total thickness not less than 2.5mm between adjacent graphite base materials which are stacked up and down and between a crucible and the lowest graphite base material when graphite base materials coated with high-purity silicon and auxiliaries are put into the crucible; then, putting into a vacuum furnace to prepare siliconized graphite by means of the vacuum vapor deposition reaction process, wherein the anti-sticking agent layer is formed by sequentially laying the following three layers from bottom to top: a lower silicon carbide powder layer, an intermediate layer and an upper silicon carbide powder layer, and the intermediate layer is prepared from quartz sands or carbon powder or mixture of quartz sands and carbon powder in an arbitrary ratio. The method can be used for effectively preventing cementation, the post-treatment of siliconized graphite is easy, the number of using crucible times is increased, and rejected products are reduced.
Method for preventing cementation in siliconized graphite preparation process by vacuum vapor deposition reaction process
PENG DAHONG (author) / LI XINYUE (author) / LUO HONG (author)
2015-06-24
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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