A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Preparation method of siliconized graphite with high-density SiC coating
The invention discloses a preparation method of silicified graphite with a high-density SiC coating. The preparation method comprises the following specific preparation steps: putting the mixture intoa high-temperature furnace with the vacuum degree of 1 to 10 <-3> Pa; putting the graphite matrix into molten silicon liquid to carry out silicification treatment; performing the silicification treatment in a constant-temperature state, wherein the silicification temperature is 1500-1800 DEG C, and the silicification time is 1-5 hours; taking out the treated graphite substrate by using a manipulator; and performing continuous heating to 1800-2000 DEG C to discharge residual silicon liquid in the graphite matrix, then performing cooling to a deposition temperature of 800-1200 DEG C, immediately introducing reaction gas into the furnace, depositing a compact SiC coating on the surface of the treated graphite matrix by adopting a chemical vapor deposition process, finally performing coolingto room temperature, and taking out the silicified graphite to obtain the silicified graphite. According to the method, the silicification process and chemical vapor deposition are combined to obtainthe completely compact silicified graphite coating product, the performance is improved, and the service life is prolonged.
一种高致密SiC涂层的硅化石墨制备方法，具体制备步骤如下：在真空度为1‑10Pa的高温炉内，将石墨基体置于熔融硅液中进行硅化处理，硅化处理在恒温状态下进行，硅化温度为1500‑1800℃，硅化时间为1‑5h，随后用机械手将处理后的石墨基体取出，继续升温至1800‑2000℃排出石墨基体中残余的硅液，然后降温至沉积温度800～1200℃后，随即向炉内通入反应气体，采用化学气相沉积工艺在处理后的石墨基体表面沉积致密SiC涂层，最后降温至室温取出即可制得。本发明将硅化过程和化学气相沉积结合起来可得到完全致密的硅化石墨涂层制品，提高其性能和使用寿命。
Preparation method of siliconized graphite with high-density SiC coating
The invention discloses a preparation method of silicified graphite with a high-density SiC coating. The preparation method comprises the following specific preparation steps: putting the mixture intoa high-temperature furnace with the vacuum degree of 1 to 10 <-3> Pa; putting the graphite matrix into molten silicon liquid to carry out silicification treatment; performing the silicification treatment in a constant-temperature state, wherein the silicification temperature is 1500-1800 DEG C, and the silicification time is 1-5 hours; taking out the treated graphite substrate by using a manipulator; and performing continuous heating to 1800-2000 DEG C to discharge residual silicon liquid in the graphite matrix, then performing cooling to a deposition temperature of 800-1200 DEG C, immediately introducing reaction gas into the furnace, depositing a compact SiC coating on the surface of the treated graphite matrix by adopting a chemical vapor deposition process, finally performing coolingto room temperature, and taking out the silicified graphite to obtain the silicified graphite. According to the method, the silicification process and chemical vapor deposition are combined to obtainthe completely compact silicified graphite coating product, the performance is improved, and the service life is prolonged.
一种高致密SiC涂层的硅化石墨制备方法，具体制备步骤如下：在真空度为1‑10Pa的高温炉内，将石墨基体置于熔融硅液中进行硅化处理，硅化处理在恒温状态下进行，硅化温度为1500‑1800℃，硅化时间为1‑5h，随后用机械手将处理后的石墨基体取出，继续升温至1800‑2000℃排出石墨基体中残余的硅液，然后降温至沉积温度800～1200℃后，随即向炉内通入反应气体，采用化学气相沉积工艺在处理后的石墨基体表面沉积致密SiC涂层，最后降温至室温取出即可制得。本发明将硅化过程和化学气相沉积结合起来可得到完全致密的硅化石墨涂层制品，提高其性能和使用寿命。
Preparation method of siliconized graphite with high-density SiC coating
一种高致密SiC涂层的硅化石墨制备方法
XUE XILI (author) / WANG YANG (author) / SHEN DING (author) / DONG WEI (author) / XUE MINGHU (author)
2020-07-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Method for preparing siliconized graphite structure material
| European Patent Office | 2020
METHOD OF MAKING ITEMS FROM ULTRAFINE GRAIN SILICONIZED GRAPHITE
| European Patent Office | 2019
METHOD FOR MANUFACTURING ARTICLES FROM FINE-GRAIN SILICONIZED GRAPHITE
| European Patent Office | 2019
| European Patent Office | 2015