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The invention discloses a temperature stable low dielectric constant microwave dielectric ceramic BaLi2Mg2V8O24 which can be sintered at a low temperature with a high quality factor and a preparation method of the dielectric ceramic. The preparation method comprises the following steps: (1) weighing and proportioning original powder of BaCO3, Li2CO3, MgO and V2O5 with the purity being over 99.9% (by weight) according to composition of BaLi2Mg2V8O24; (2) carrying out wet ball milling and mixing on the raw materials in the step (1) for 12 hours, wherein a ball milling medium is distilled water, and pre-sintering the dried raw materials in the atmosphere at 750 DEG C for 6 hours; and (3) adding an adhesive into the powder prepared in the step (2) and granulating the raw materials, then pressing and moulding the raw materials, and finally sintering the raw materials in the atmosphere at 800-850 DEG C for 4 hours, wherein the adhesive is a polyvinyl alcohol solution with the mass concentration being 5% and the additive amount of polyvinyl alcohol accounts for 3% of the total mass of the powder. The prepared ceramic is well sintered below 850 DEG C, the dielectric constant of the ceramic reaches 23.2-24.1, the quality factor Qf value reaches up to 77000-101000GHz, and the temperature coefficient of resonance frequency is small, so that the ceramic has huge application value in industry.
The invention discloses a temperature stable low dielectric constant microwave dielectric ceramic BaLi2Mg2V8O24 which can be sintered at a low temperature with a high quality factor and a preparation method of the dielectric ceramic. The preparation method comprises the following steps: (1) weighing and proportioning original powder of BaCO3, Li2CO3, MgO and V2O5 with the purity being over 99.9% (by weight) according to composition of BaLi2Mg2V8O24; (2) carrying out wet ball milling and mixing on the raw materials in the step (1) for 12 hours, wherein a ball milling medium is distilled water, and pre-sintering the dried raw materials in the atmosphere at 750 DEG C for 6 hours; and (3) adding an adhesive into the powder prepared in the step (2) and granulating the raw materials, then pressing and moulding the raw materials, and finally sintering the raw materials in the atmosphere at 800-850 DEG C for 4 hours, wherein the adhesive is a polyvinyl alcohol solution with the mass concentration being 5% and the additive amount of polyvinyl alcohol accounts for 3% of the total mass of the powder. The prepared ceramic is well sintered below 850 DEG C, the dielectric constant of the ceramic reaches 23.2-24.1, the quality factor Qf value reaches up to 77000-101000GHz, and the temperature coefficient of resonance frequency is small, so that the ceramic has huge application value in industry.
Temperature stable low dielectric constant microwave dielectric ceramic BaLi2Mg2V8O24
2015-09-16
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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