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Temperature-stable low-dielectric-constant microwave dielectric ceramic Bi3Nb9WO30
The invention discloses low-dielectric-constant microwave dielectric ceramic containing a bismuth compound Bi3Nb9WO30 as a temperature-stable high-quality factory as well as a preparation method thereof. The preparation method comprises the steps: (1) measuring and mixing original powder of Bi2O3, Nb2O5 and WO3 with purity more than or equal to 99.9 percent by weight according to the constitution of Bi3Nb9WO30; (2) ball milling the raw material in step (1) for 12 hours in a wet way, wherein a ball milling medium is distilled water, drying the raw material, and then pre-burning the raw material for 6 hours in an atmosphere of 100 DEG C; (3) adding a bonding agent into the powder obtained in the step (2), then granulating, then pressing and molding, and finally sintering for 4 hours in an atmosphere of 1050 to 1100 DEG C; the bonding agent adopts a 5% (by mass) polyvinyl alcohol solution, and the addition amount of the polyvinyl alcohol accounts for 3 percent of the total weight of the powder. The prepared ceramic is good in sintering, the dielectric constant reaches 25.2 to 25.9, the quality factor value Qf reaches up to 71000 to 122000 GHz, the resonant frequency temperature coefficient is small, and the application value in industry is greatly high.
Temperature-stable low-dielectric-constant microwave dielectric ceramic Bi3Nb9WO30
The invention discloses low-dielectric-constant microwave dielectric ceramic containing a bismuth compound Bi3Nb9WO30 as a temperature-stable high-quality factory as well as a preparation method thereof. The preparation method comprises the steps: (1) measuring and mixing original powder of Bi2O3, Nb2O5 and WO3 with purity more than or equal to 99.9 percent by weight according to the constitution of Bi3Nb9WO30; (2) ball milling the raw material in step (1) for 12 hours in a wet way, wherein a ball milling medium is distilled water, drying the raw material, and then pre-burning the raw material for 6 hours in an atmosphere of 100 DEG C; (3) adding a bonding agent into the powder obtained in the step (2), then granulating, then pressing and molding, and finally sintering for 4 hours in an atmosphere of 1050 to 1100 DEG C; the bonding agent adopts a 5% (by mass) polyvinyl alcohol solution, and the addition amount of the polyvinyl alcohol accounts for 3 percent of the total weight of the powder. The prepared ceramic is good in sintering, the dielectric constant reaches 25.2 to 25.9, the quality factor value Qf reaches up to 71000 to 122000 GHz, the resonant frequency temperature coefficient is small, and the application value in industry is greatly high.
Temperature-stable low-dielectric-constant microwave dielectric ceramic Bi3Nb9WO30
FANG LIANG (author) / LUO HAO (author) / SU HEPING (author)
2015-10-21
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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