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Reaction sintering silicon carbide ceramic uniform-temperature plate
The invention discloses a reaction sintering silicon carbide ceramic uniform-temperature plate. A manufacturing method of the reaction sintering silicon carbide ceramic uniform-temperature plate comprises the steps that powder is prepared, wherein carbon and silicon carbide are mixed and added with zinc stearate and polyvinyl alcohol for spray granulation, and powder is prepared; briquettes are pressed; vacuum sintering is carried out, and silica powder is placed on the surface of the briquettes for reaction sintering; oxidation sintering is carried out, wherein oxidation sintering is carried out on the obtained uniform-temperature plate. The manufacturing method is applicable to manufacturing uniform-temperature plates of different thicknesses, appearances and structures, and the plate is compact in texture, accurate in size and high in yield. The reaction sintering silicon carbide ceramic uniform-temperature plate is good in heat conduction performance, high in high-temperature strength, low in thermal expansion coefficient and good in high-temperature corrosion resistance; particularly, the siliconing reaction is more sufficient through sintering at temperature of 1800-1900 DEG C exceeding normal reaction temperature, the texture compactness is ensured, and product cracking is avoided; in addition, by means of high-temperature oxidation sintering, the stress changes of the product at high temperature can be detected, the quality problem is prevented from being caused in the application process, and the application cost is lowered.
Reaction sintering silicon carbide ceramic uniform-temperature plate
The invention discloses a reaction sintering silicon carbide ceramic uniform-temperature plate. A manufacturing method of the reaction sintering silicon carbide ceramic uniform-temperature plate comprises the steps that powder is prepared, wherein carbon and silicon carbide are mixed and added with zinc stearate and polyvinyl alcohol for spray granulation, and powder is prepared; briquettes are pressed; vacuum sintering is carried out, and silica powder is placed on the surface of the briquettes for reaction sintering; oxidation sintering is carried out, wherein oxidation sintering is carried out on the obtained uniform-temperature plate. The manufacturing method is applicable to manufacturing uniform-temperature plates of different thicknesses, appearances and structures, and the plate is compact in texture, accurate in size and high in yield. The reaction sintering silicon carbide ceramic uniform-temperature plate is good in heat conduction performance, high in high-temperature strength, low in thermal expansion coefficient and good in high-temperature corrosion resistance; particularly, the siliconing reaction is more sufficient through sintering at temperature of 1800-1900 DEG C exceeding normal reaction temperature, the texture compactness is ensured, and product cracking is avoided; in addition, by means of high-temperature oxidation sintering, the stress changes of the product at high temperature can be detected, the quality problem is prevented from being caused in the application process, and the application cost is lowered.
Reaction sintering silicon carbide ceramic uniform-temperature plate
QI XIYUN (author) / JIANG GANG (author) / WANG MINGXIANG (author) / GUO HUANJUN (author) / SHI WEI (author) / SONG CHUANZHONG (author)
2015-09-23
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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