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High-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and preparation method thereof
The invention relates to a high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and a preparation method thereof. The high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material comprises 75-95wt.% of silicon carbide, 0.5-10wt.% of graphene, 1-3wt.% of surfactants, 0.5-2.5wt.% of dispersing agents, 2-10wt.% of binders and 0.5-3.5wt.% of boron carbide. The high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and the preparation method thereof have the advantages that by a specific ratio among the silicon carbide, the graphene and the boron carbide, a green body is formed by means of pressing and then is subjected to pressureless sintering under a vacuum condition to obtain the SiC (silicon carbide) ceramic material; the graphene is distributed in an SiC matrix material uniformly and is closely combined with SiC, and the problems that decreasing and counteracting of thermal conductivity result from phonon scattering of internal pores of the material and exceed the increasing effect of the introduced graphene on the thermal conductivity are avoided, so that densification and uniformity of the ceramic material are guaranteed, and the high thermal conductivity is achieved.
High-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and preparation method thereof
The invention relates to a high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and a preparation method thereof. The high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material comprises 75-95wt.% of silicon carbide, 0.5-10wt.% of graphene, 1-3wt.% of surfactants, 0.5-2.5wt.% of dispersing agents, 2-10wt.% of binders and 0.5-3.5wt.% of boron carbide. The high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and the preparation method thereof have the advantages that by a specific ratio among the silicon carbide, the graphene and the boron carbide, a green body is formed by means of pressing and then is subjected to pressureless sintering under a vacuum condition to obtain the SiC (silicon carbide) ceramic material; the graphene is distributed in an SiC matrix material uniformly and is closely combined with SiC, and the problems that decreasing and counteracting of thermal conductivity result from phonon scattering of internal pores of the material and exceed the increasing effect of the introduced graphene on the thermal conductivity are avoided, so that densification and uniformity of the ceramic material are guaranteed, and the high thermal conductivity is achieved.
High-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and preparation method thereof
ZHANG YUJUN (author) / LI QISONG (author) / TAN SHALI (author)
2015-09-23
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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