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Method of in-situ growth of Si3N4 nanowires in 2D carbon felt
The invention relates to a method of in-situ growth of Si3N4 nanowires in a 2D carbon felt. By adopting the precursor steeping-pyrolysis method, Si3N4 nanowires grow in situ in the carbon felt, so that the problem that conventional CVD method is poor in permeability in a porous preform with large thickness and high density is solved, and the situation that Si3N4 nanowires uniformly grow in the overall preform from inside to surface is achieved; in the method, the compositional ratio of a precursor, the steeping method and the heat treatment process have great influences on test results; through adjusting experiment parameters, uniformly distributed Si3N4 nanowires can be obtained in the carbon felt, and enhancement effect improvement of the 2D carbon felt in multidimensional scaling is facilitated; according to the method, the distribution density of the Si3N4 nanowires in the carbon felt can be controlled, and the defect that the conventional CVD method is poor in permeability in the nanowires growing in the carbon felt is overcome; the method has the advantages of being low in cost, short in circle and easy to achieve large-scale and efficient production.
Method of in-situ growth of Si3N4 nanowires in 2D carbon felt
The invention relates to a method of in-situ growth of Si3N4 nanowires in a 2D carbon felt. By adopting the precursor steeping-pyrolysis method, Si3N4 nanowires grow in situ in the carbon felt, so that the problem that conventional CVD method is poor in permeability in a porous preform with large thickness and high density is solved, and the situation that Si3N4 nanowires uniformly grow in the overall preform from inside to surface is achieved; in the method, the compositional ratio of a precursor, the steeping method and the heat treatment process have great influences on test results; through adjusting experiment parameters, uniformly distributed Si3N4 nanowires can be obtained in the carbon felt, and enhancement effect improvement of the 2D carbon felt in multidimensional scaling is facilitated; according to the method, the distribution density of the Si3N4 nanowires in the carbon felt can be controlled, and the defect that the conventional CVD method is poor in permeability in the nanowires growing in the carbon felt is overcome; the method has the advantages of being low in cost, short in circle and easy to achieve large-scale and efficient production.
Method of in-situ growth of Si3N4 nanowires in 2D carbon felt
LU JINHUA (author) / GUO KEBING (author) / SONG QIANG (author) / LI WEI (author) / LI HEJUN (author)
2015-09-23
Patent
Electronic Resource
English
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