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Silicon carbide-tantalum carbide composite and susceptor
Provided is a silicon carbide-tantalum carbide composite exhibiting excellent durability. This silicon carbide-tantalum carbide composite (1) is equipped with: a body (10) having at least one section of the surface layer thereof configured from a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is positioned on the first silicon carbide layer (12). The second silicon carbide layer (13) is positioned between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of 1.2 or higher as measured by x-ray photoelectron spectroscopy. The second silicon carbide layer (13) also has a peak strength ratio (G/D) of carbon G-band to D-band of 1.0 or higher as measured by Raman spectroscopy.
Silicon carbide-tantalum carbide composite and susceptor
Provided is a silicon carbide-tantalum carbide composite exhibiting excellent durability. This silicon carbide-tantalum carbide composite (1) is equipped with: a body (10) having at least one section of the surface layer thereof configured from a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is positioned on the first silicon carbide layer (12). The second silicon carbide layer (13) is positioned between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of 1.2 or higher as measured by x-ray photoelectron spectroscopy. The second silicon carbide layer (13) also has a peak strength ratio (G/D) of carbon G-band to D-band of 1.0 or higher as measured by Raman spectroscopy.
Silicon carbide-tantalum carbide composite and susceptor
SHINOHARA MASATO (author)
2015-10-07
Patent
Electronic Resource
English
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