A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
- SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR
본 발명은, 내구성이 우수한 탄화규소-탄화탄탈 복합재를 제공한다. 탄화규소-탄화탄탈 복합재(1)는, 표층의 적어도 일부가 제1 탄화규소층(12)에 의해 구성된 본체(10)와, 탄화탄탈층(20)과, 제2 탄화규소층(13)을 구비한다. 탄화탄탈층(20)은 제1 탄화규소층(12)의 위에 배치되어 있다. 제2 탄화규소층(13)은 탄화탄탈층(20)과 제1 탄화규소층(12) 사이에 배치되어 있다. 제2 탄화규소층(13)은 X선 광전자 분광법에 의해 측정되는 C/Si 조성비가 1.2 이상이다. 제2 탄화규소층(13)은 라만 분광법에 의해 측정되는 탄소의 G 밴드 및 D 밴드의 피크 강도비 G/D가 1.0 이상이다.
Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20) ; and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.
- SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR
본 발명은, 내구성이 우수한 탄화규소-탄화탄탈 복합재를 제공한다. 탄화규소-탄화탄탈 복합재(1)는, 표층의 적어도 일부가 제1 탄화규소층(12)에 의해 구성된 본체(10)와, 탄화탄탈층(20)과, 제2 탄화규소층(13)을 구비한다. 탄화탄탈층(20)은 제1 탄화규소층(12)의 위에 배치되어 있다. 제2 탄화규소층(13)은 탄화탄탈층(20)과 제1 탄화규소층(12) 사이에 배치되어 있다. 제2 탄화규소층(13)은 X선 광전자 분광법에 의해 측정되는 C/Si 조성비가 1.2 이상이다. 제2 탄화규소층(13)은 라만 분광법에 의해 측정되는 탄소의 G 밴드 및 D 밴드의 피크 강도비 G/D가 1.0 이상이다.
Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20) ; and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.
- SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR
탄화규소-탄화탄탈 복합재 및 서셉터
2021-04-13
Patent
Electronic Resource
Korean
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