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Ferroelectric film with high residual polarization
The invention discloses a ferroelectric film with high residual polarization, i.e. a Cr<3+> doped PZT film. According to the invention, Cr<3+> doping ions with a mole percentage of 2%-10% are introduced into a PZT film layer for the first time to compose the Cr<3+> doped PZT film, and at a low annealing temperature, the with ferroelectric film with high residual polarization can be obtained. Compared with ordinary PZT/ITO structure ferroelectric films, the residual polarization of the ferroelectric film provided by the invention is improved by 2-3 times, and the photoelectric conversion efficiency of the battery formed by the film is increased by 6 times, thus achieving good effects.
Ferroelectric film with high residual polarization
The invention discloses a ferroelectric film with high residual polarization, i.e. a Cr<3+> doped PZT film. According to the invention, Cr<3+> doping ions with a mole percentage of 2%-10% are introduced into a PZT film layer for the first time to compose the Cr<3+> doped PZT film, and at a low annealing temperature, the with ferroelectric film with high residual polarization can be obtained. Compared with ordinary PZT/ITO structure ferroelectric films, the residual polarization of the ferroelectric film provided by the invention is improved by 2-3 times, and the photoelectric conversion efficiency of the battery formed by the film is increased by 6 times, thus achieving good effects.
Ferroelectric film with high residual polarization
ZHENG FENGANG (author) / GU SHOULIN (author) / WU XINGBO (author)
2015-10-21
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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