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FERROELECTRIC THIN FILM
PROBLEM TO BE SOLVED: To provide a ferroelectric thin film formed on a substrate and having an increased amount of remanent polarization in the entire thin film of the ferroelectric thin film.SOLUTION: A ferroelectric thin film 12 includes a perovskite-type metal oxide and is formed on a substrate 11. The ferroelectric thin film 12 further includes a columnar structure group 13 formed of a plurality of column structures each formed of a spinel-type metal oxide. The columnar structure group 13 is in a state of standing in a direction perpendicular to a surface of the substrate 11, or in a state of slanting at a slant angle in a range of -10° or more to +10° or less with respect to the perpendicular direction.
【課題】基板上に形成された強誘電体薄膜の薄膜全体において残留分極量を向上させた強誘電体薄膜を提供する。【解決手段】基板１１上に形成されたペロブスカイト型金属酸化物を含有する強誘電体薄膜１２であって、強誘電体薄膜１２はスピネル型金属酸化物からなる複数の柱状構造体から形成される柱状構造体群１３を含有し、柱状構造体群１３が基板１１表面に対して垂直方向に立位している、又は垂直方向を中心として−１０?以上＋１０?以下の範囲で傾斜している。【選択図】図１
FERROELECTRIC THIN FILM
PROBLEM TO BE SOLVED: To provide a ferroelectric thin film formed on a substrate and having an increased amount of remanent polarization in the entire thin film of the ferroelectric thin film.SOLUTION: A ferroelectric thin film 12 includes a perovskite-type metal oxide and is formed on a substrate 11. The ferroelectric thin film 12 further includes a columnar structure group 13 formed of a plurality of column structures each formed of a spinel-type metal oxide. The columnar structure group 13 is in a state of standing in a direction perpendicular to a surface of the substrate 11, or in a state of slanting at a slant angle in a range of -10° or more to +10° or less with respect to the perpendicular direction.
【課題】基板上に形成された強誘電体薄膜の薄膜全体において残留分極量を向上させた強誘電体薄膜を提供する。【解決手段】基板１１上に形成されたペロブスカイト型金属酸化物を含有する強誘電体薄膜１２であって、強誘電体薄膜１２はスピネル型金属酸化物からなる複数の柱状構造体から形成される柱状構造体群１３を含有し、柱状構造体群１３が基板１１表面に対して垂直方向に立位している、又は垂直方向を中心として−１０?以上＋１０?以下の範囲で傾斜している。【選択図】図１
FERROELECTRIC THIN FILM
強誘電体薄膜
SHIMADA MIKIO (author) / AEBA TOSHIAKI (author) / IFUKU TOSHIHIRO (author) / HAYASHI JUNPEI (author) / KUBOTA JUN (author) / FUNAKUBO HIROSHI (author) / SHIMAKAWA YUICHI (author) / AZUMA MASAKI (author) / NAKAMURA YOSHITAKA (author)
2016-01-14
Patent
Electronic Resource
Japanese
IPC:
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
/
B82Y
Bestimmter Gebrauch oder bestimmte Anwendung von Nanostrukturen
,
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
/
C01G
Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle
,
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
H01B
CABLES
,
Kabel
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Composition for ferroelectric thin film formation and method for forming ferroelectric thin film
| European Patent Office | 2016