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Modified electronic ceramic material and preparation method thereof
The invention discloses a modified electronic ceramic material and a preparation method thereof. The modified electronic ceramic material comprises 45-70 parts of titanium oxide, 20-40 parts of zirconium silicate, 4-12 parts of calcium oxide, 3-8 parts of magnesium salicylate, 2-6 parts of acetylene black, 0.2-0.8 part of tungsten oxide, 0.8-2.7 parts of holmium nitride, 5-15 parts of niobium strontium barium oxide, 10-25 parts of 3-hydroxy-3-methyl-2-butanone and 3.5-8.5 parts of potassium antimony tartrate. The preparation method comprises the following steps: mixing raw materials, carrying out ball milling, forming, drying and calcining in a muffle furnace to obtain the modified electronic ceramic material. The modified electronic ceramic material has favorable temperature stability and toughness, and can well satisfy the demands of partial special occasions. The insulation resistance of the modified electronic ceramic material is 1.2-1.6*10<10>ohm.cm, the capacitance temperature change rate is 3-10 ppm/DEG C, and the elongation at break is 150-170%.
Modified electronic ceramic material and preparation method thereof
The invention discloses a modified electronic ceramic material and a preparation method thereof. The modified electronic ceramic material comprises 45-70 parts of titanium oxide, 20-40 parts of zirconium silicate, 4-12 parts of calcium oxide, 3-8 parts of magnesium salicylate, 2-6 parts of acetylene black, 0.2-0.8 part of tungsten oxide, 0.8-2.7 parts of holmium nitride, 5-15 parts of niobium strontium barium oxide, 10-25 parts of 3-hydroxy-3-methyl-2-butanone and 3.5-8.5 parts of potassium antimony tartrate. The preparation method comprises the following steps: mixing raw materials, carrying out ball milling, forming, drying and calcining in a muffle furnace to obtain the modified electronic ceramic material. The modified electronic ceramic material has favorable temperature stability and toughness, and can well satisfy the demands of partial special occasions. The insulation resistance of the modified electronic ceramic material is 1.2-1.6*10<10>ohm.cm, the capacitance temperature change rate is 3-10 ppm/DEG C, and the elongation at break is 150-170%.
Modified electronic ceramic material and preparation method thereof
FEI GENHUA (author)
2015-11-25
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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