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Modified ATO ceramic target material and preparation method thereof
The invention discloses a modified ATO ceramic target material and a preparation method thereof. The modified ATO ceramic target material comprises the following raw material components in parts by weight: 89-98 parts of tin oxide, 1-10 parts of antimony oxide and 1-3 parts of doped oxide, and the doped oxide is at least one of ZnO, Bi2O3, TiO2 and Ta2O5. The specific metal oxide is adopted to perform doping modification on the ATO ceramic target material, the sintering atmosphere and the sintering temperature system are controlled, and the characteristics of the doped oxide and the interaction between the doped oxide and SnO2 are utilized, so that the sintering density of the target material is improved, pores of grain boundaries are eliminated, and the target material is prepared. And the conductivity of the target material and the stability of the target material in the magnetron sputtering process are further improved. The relative density of the modified ATO ceramic target material is larger than or equal to 97.8% and even can reach 99.2%; and the resistivity is less than or equal to 5.2 * 10 <-3 > omega.cm and even can reach 3.8 * 10 <-3 > omega.cm.
本发明公开了一种改性ATO陶瓷靶材及其制备方法，该改性ATO陶瓷靶材的原料组分按重量份计包括：氧化锡89‑98份，氧化锑1‑10份，掺杂氧化物1‑3份，所述掺杂氧化物为ZnO、Bi2O3、TiO2、Ta2O5中的至少一种。本发明通过采用特定的金属氧化物对ATO陶瓷靶材进行掺杂改性，并控制烧结气氛与烧结温度制度，利用掺杂氧化物的特性及其与SnO2的相互作用，从而提高靶材的烧结致密度，消除晶界的气孔，进而提高靶材的导电性以及在磁控溅射过程中的稳定性。实现改性ATO陶瓷靶材的相对密度≥97.8％，甚至可达99.2％；电阻率≤5.2×10‑3Ω·cm，甚至可达3.8×10‑3Ω·cm。
Modified ATO ceramic target material and preparation method thereof
The invention discloses a modified ATO ceramic target material and a preparation method thereof. The modified ATO ceramic target material comprises the following raw material components in parts by weight: 89-98 parts of tin oxide, 1-10 parts of antimony oxide and 1-3 parts of doped oxide, and the doped oxide is at least one of ZnO, Bi2O3, TiO2 and Ta2O5. The specific metal oxide is adopted to perform doping modification on the ATO ceramic target material, the sintering atmosphere and the sintering temperature system are controlled, and the characteristics of the doped oxide and the interaction between the doped oxide and SnO2 are utilized, so that the sintering density of the target material is improved, pores of grain boundaries are eliminated, and the target material is prepared. And the conductivity of the target material and the stability of the target material in the magnetron sputtering process are further improved. The relative density of the modified ATO ceramic target material is larger than or equal to 97.8% and even can reach 99.2%; and the resistivity is less than or equal to 5.2 * 10 <-3 > omega.cm and even can reach 3.8 * 10 <-3 > omega.cm.
本发明公开了一种改性ATO陶瓷靶材及其制备方法，该改性ATO陶瓷靶材的原料组分按重量份计包括：氧化锡89‑98份，氧化锑1‑10份，掺杂氧化物1‑3份，所述掺杂氧化物为ZnO、Bi2O3、TiO2、Ta2O5中的至少一种。本发明通过采用特定的金属氧化物对ATO陶瓷靶材进行掺杂改性，并控制烧结气氛与烧结温度制度，利用掺杂氧化物的特性及其与SnO2的相互作用，从而提高靶材的烧结致密度，消除晶界的气孔，进而提高靶材的导电性以及在磁控溅射过程中的稳定性。实现改性ATO陶瓷靶材的相对密度≥97.8％，甚至可达99.2％；电阻率≤5.2×10‑3Ω·cm，甚至可达3.8×10‑3Ω·cm。
Modified ATO ceramic target material and preparation method thereof
一种改性ATO陶瓷靶材及其制备方法
CHEN LU (author) / GE CHUNQIAO (author) / LIANG QIYING (author) / GAO YUHANG (author) / LUO ZEYU (author)
2024-12-13
Patent
Electronic Resource
Chinese
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