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Preparation method of low-resistivity ITO target material
The invention discloses a preparation method of a low-resistivity ITO target material. The preparation method includes the steps of producing a high-strength green body through casting moulding, and sintering the green body with oxygen concentration ratio controlled to produce the low-resistivity ITO target material. In the invention, by means of control of oxygen concentration, the ITO target material is subjected to oxygen loss partially to form oxygen cavities, which can increase electric-conductivity of the target material as charge carriers, so that the preparation method can be used for preparing the low-resistivity ITO target material with strength thereof being ensured just by controlling the range of oxygen concentration properly. The green body is high in density, is good in uniformity and is not liable to deform and crack. The preparation method is simple and controllable, is low in cost and can achieve large-scale production. The ITO target material is higher than 99.5% in relative density and is lower than 0.110 m[ohm]*cm.
Preparation method of low-resistivity ITO target material
The invention discloses a preparation method of a low-resistivity ITO target material. The preparation method includes the steps of producing a high-strength green body through casting moulding, and sintering the green body with oxygen concentration ratio controlled to produce the low-resistivity ITO target material. In the invention, by means of control of oxygen concentration, the ITO target material is subjected to oxygen loss partially to form oxygen cavities, which can increase electric-conductivity of the target material as charge carriers, so that the preparation method can be used for preparing the low-resistivity ITO target material with strength thereof being ensured just by controlling the range of oxygen concentration properly. The green body is high in density, is good in uniformity and is not liable to deform and crack. The preparation method is simple and controllable, is low in cost and can achieve large-scale production. The ITO target material is higher than 99.5% in relative density and is lower than 0.110 m[ohm]*cm.
Preparation method of low-resistivity ITO target material
ZHANG YUANSONG (author) / YE YOUMING (author) / XIONG AICHEN (author) / ZHAO MINGYONG (author) / TAN CUI (author) / WEI CHENGGUO (author) / FAN FAN (author) / XU CANHUI (author) / YE FANGJIAN (author)
2015-12-09
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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