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The invention discloses a vanadium based temperature stable microwave dielectric ceramic and a preparation method thereof. The structure expression of the ceramic material is: (1-x)CeVO4-xTiO2, wherein x is greater than or equal to 0.1 and smaller than or equal to 0.25. The vanadium based low loss temperature stable microwave dielectric ceramic material provided by the invention has the characteristics of: adjustable relative dielectric constant (11.2-16.5), good microwave performance (Qf=14,400GHz-25,700GHz), low sintering temperature (950-1100DEG C), a temperature coefficient of resonant frequency approaching zero (ranging from -12.2ppm/DEG C to +14.7ppm/DEG C), and simple chemical composition and preparation process.
The invention discloses a vanadium based temperature stable microwave dielectric ceramic and a preparation method thereof. The structure expression of the ceramic material is: (1-x)CeVO4-xTiO2, wherein x is greater than or equal to 0.1 and smaller than or equal to 0.25. The vanadium based low loss temperature stable microwave dielectric ceramic material provided by the invention has the characteristics of: adjustable relative dielectric constant (11.2-16.5), good microwave performance (Qf=14,400GHz-25,700GHz), low sintering temperature (950-1100DEG C), a temperature coefficient of resonant frequency approaching zero (ranging from -12.2ppm/DEG C to +14.7ppm/DEG C), and simple chemical composition and preparation process.
Vanadium based temperature stable microwave dielectric ceramic and preparation method thereof
2016-02-03
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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