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Vanadium based temperature stable microwave dielectric ceramic and preparation method thereof

ZHOU DI / LI WENBO / YAO XI

The invention discloses a vanadium based temperature stable microwave dielectric ceramic and a preparation method thereof. The structure expression of the ceramic material is: (1-x)CeVO4-xTiO2, wherein x is greater than or equal to 0.1 and smaller than or equal to 0.25. The vanadium based low loss temperature stable microwave dielectric ceramic material provided by the invention has the characteristics of: adjustable relative dielectric constant (11.2-16.5), good microwave performance (Qf=14,400GHz-25,700GHz), low sintering temperature (950-1100DEG C), a temperature coefficient of resonant frequency approaching zero (ranging from -12.2ppm/DEG C to +14.7ppm/DEG C), and simple chemical composition and preparation process.

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Vanadium based temperature stable microwave dielectric ceramic and preparation method thereof

ZHOU DI / LI WENBO / YAO XI

The invention discloses a vanadium based temperature stable microwave dielectric ceramic and a preparation method thereof. The structure expression of the ceramic material is: (1-x)CeVO4-xTiO2, wherein x is greater than or equal to 0.1 and smaller than or equal to 0.25. The vanadium based low loss temperature stable microwave dielectric ceramic material provided by the invention has the characteristics of: adjustable relative dielectric constant (11.2-16.5), good microwave performance (Qf=14,400GHz-25,700GHz), low sintering temperature (950-1100DEG C), a temperature coefficient of resonant frequency approaching zero (ranging from -12.2ppm/DEG C to +14.7ppm/DEG C), and simple chemical composition and preparation process.

Vanadium based temperature stable microwave dielectric ceramic and preparation method thereof

ZHOU DI / LI WENBO / YAO XI

The invention discloses a vanadium based temperature stable microwave dielectric ceramic and a preparation method thereof. The structure expression of the ceramic material is: (1-x)CeVO4-xTiO2, wherein x is greater than or equal to 0.1 and smaller than or equal to 0.25. The vanadium based low loss temperature stable microwave dielectric ceramic material provided by the invention has the characteristics of: adjustable relative dielectric constant (11.2-16.5), good microwave performance (Qf=14,400GHz-25,700GHz), low sintering temperature (950-1100DEG C), a temperature coefficient of resonant frequency approaching zero (ranging from -12.2ppm/DEG C to +14.7ppm/DEG C), and simple chemical composition and preparation process.

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Titel:

Vanadium based temperature stable microwave dielectric ceramic and preparation method thereof

Beteiligte:

ZHOU DI (Autor:in) / LI WENBO (Autor:in) / YAO XI (Autor:in)

Erscheinungsdatum:

03.02.2016

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C04B Kalk , LIME

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