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Crucible for pulling monocrystalline silicon and preparation method therefor
The invention relates to a crucible for pulling monocrystalline silicon and a preparation method therefor. The crucible consists of a C/SiC crucible blank and various coatings, wherein the C/SiC crucible blank is prepared by manufacturing a green body by methods such as an SMC and then carrying out heat treatment; and the various coatings are prepared by an electric arc method. The crucible prepared by the method is comprehensively better than a quartz crucible prepared by the electric arc method.
Crucible for pulling monocrystalline silicon and preparation method therefor
The invention relates to a crucible for pulling monocrystalline silicon and a preparation method therefor. The crucible consists of a C/SiC crucible blank and various coatings, wherein the C/SiC crucible blank is prepared by manufacturing a green body by methods such as an SMC and then carrying out heat treatment; and the various coatings are prepared by an electric arc method. The crucible prepared by the method is comprehensively better than a quartz crucible prepared by the electric arc method.
Crucible for pulling monocrystalline silicon and preparation method therefor
ZHANG HONGQI (author)
2016-02-03
Patent
Electronic Resource
English
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