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Preparation method of crucible for pulling monocrystalline silicon
The invention provides a preparation method of a crucible for pulling single crystal silicon. The preparation method comprises the steps of material preparation, forming, sintering and film coating. According to the method, the crucible made of the silicon nitride material is prepared in a non-vacuum firing mode, a common calcining furnace can be adopted without firing in a vacuum furnace, and the calcining furnace does not need additional structural reinforcement under the condition that the air pressure does not need to be considered, so that the preparation cost of the calcining furnace is reduced, and the damage rate of the calcining furnace is reduced; after sintering is completed to obtain a crucible semi-finished product, the crucible semi-finished product is put into a vacuum coating machine, the inner wall of the crucible is coated with a silicon nitride film, and due to the fact that the purity of the coated film in the vacuum coating machine is extremely high, the layer of film is the pure silicon nitride film, namely, the silicon nitride film making contact with monocrystalline silicon in the crucible is the high-purity silicon nitride film; the crucible body is not fired in a non-vacuum environment, so that the problem that the purity of monocrystalline silicon is influenced due to the fact that the crucible contains impurities is solved.
本发明提供了一种用于单晶硅拉晶的坩埚的制备方法，包括配料、成型、烧结、镀膜的步骤。本发明中采用非真空烧制的方式来制备氮化硅材质的坩埚，因其无需在真空炉中进行烧制，即可采用普通的煅烧炉，在无需考虑空气压强的情况下，煅烧炉也不需要额外的结构强化，进而降低了煅烧炉的制备成本，并降低了煅烧炉的损坏率；本发明在烧结完成获得坩埚半成品后，还将其投入真空镀膜机中，在坩埚内壁镀上氮化硅膜，因真空镀膜机中镀膜的纯度极高，因此这一层膜为纯氮化硅膜，即坩埚内的单晶硅所接触的为高纯度的氮化硅膜，而不是下方在非真空环境下烧制的坩埚本体，不用担心坩埚因含有杂质而影响单晶硅纯度的问题。
Preparation method of crucible for pulling monocrystalline silicon
The invention provides a preparation method of a crucible for pulling single crystal silicon. The preparation method comprises the steps of material preparation, forming, sintering and film coating. According to the method, the crucible made of the silicon nitride material is prepared in a non-vacuum firing mode, a common calcining furnace can be adopted without firing in a vacuum furnace, and the calcining furnace does not need additional structural reinforcement under the condition that the air pressure does not need to be considered, so that the preparation cost of the calcining furnace is reduced, and the damage rate of the calcining furnace is reduced; after sintering is completed to obtain a crucible semi-finished product, the crucible semi-finished product is put into a vacuum coating machine, the inner wall of the crucible is coated with a silicon nitride film, and due to the fact that the purity of the coated film in the vacuum coating machine is extremely high, the layer of film is the pure silicon nitride film, namely, the silicon nitride film making contact with monocrystalline silicon in the crucible is the high-purity silicon nitride film; the crucible body is not fired in a non-vacuum environment, so that the problem that the purity of monocrystalline silicon is influenced due to the fact that the crucible contains impurities is solved.
本发明提供了一种用于单晶硅拉晶的坩埚的制备方法，包括配料、成型、烧结、镀膜的步骤。本发明中采用非真空烧制的方式来制备氮化硅材质的坩埚，因其无需在真空炉中进行烧制，即可采用普通的煅烧炉，在无需考虑空气压强的情况下，煅烧炉也不需要额外的结构强化，进而降低了煅烧炉的制备成本，并降低了煅烧炉的损坏率；本发明在烧结完成获得坩埚半成品后，还将其投入真空镀膜机中，在坩埚内壁镀上氮化硅膜，因真空镀膜机中镀膜的纯度极高，因此这一层膜为纯氮化硅膜，即坩埚内的单晶硅所接触的为高纯度的氮化硅膜，而不是下方在非真空环境下烧制的坩埚本体，不用担心坩埚因含有杂质而影响单晶硅纯度的问题。
Preparation method of crucible for pulling monocrystalline silicon
一种用于单晶硅拉晶的坩埚的制备方法
WANG SHENGMING (author) / ZHU HONGXI (author) / FANG DUNPING (author) / WU JIANHUA (author) / WU HAN (author)
2024-09-13
Patent
Electronic Resource
Chinese
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