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IGZO sputtering target and IGZO film
Provided is an IGZO sintered body sputtering target that comprises indium (In), gallium (Ga), zinc (Zn), and oxygen (O) and that is characterized by: the In, Ga, and Zn satisfying 0.575>=In/(In+Ga)>=0.500 and being within a composition range that is represented by Zn/(In+Ga+Zn)<0.333; having a single-phase structure comprising an (InxGa(1-x))2ZnO4(1>X>0) phase or a two-phase structure comprising an (InxGa(1-x))2ZnO4(1>X>0) phase and an In2O3 phase; and by the In2O3 phase having a maximum diameter of 10 [mu]m or less. Also provided is IGZO target technology that makes DC sputtering possible, that achieves low bulk resistance in a sputtering target, a carrier concentration that is equal to or less than a fixed range, and a target having high density, and that keeps the occurrence of arcing to a minimum.
IGZO sputtering target and IGZO film
Provided is an IGZO sintered body sputtering target that comprises indium (In), gallium (Ga), zinc (Zn), and oxygen (O) and that is characterized by: the In, Ga, and Zn satisfying 0.575>=In/(In+Ga)>=0.500 and being within a composition range that is represented by Zn/(In+Ga+Zn)<0.333; having a single-phase structure comprising an (InxGa(1-x))2ZnO4(1>X>0) phase or a two-phase structure comprising an (InxGa(1-x))2ZnO4(1>X>0) phase and an In2O3 phase; and by the In2O3 phase having a maximum diameter of 10 [mu]m or less. Also provided is IGZO target technology that makes DC sputtering possible, that achieves low bulk resistance in a sputtering target, a carrier concentration that is equal to or less than a fixed range, and a target having high density, and that keeps the occurrence of arcing to a minimum.
IGZO sputtering target and IGZO film
OSADA KOZO (author) / KAKUTA KOJI (author) / KURIHARA TOSHIYA (author)
2016-02-03
Patent
Electronic Resource
English