A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Preparation method for low-temperature-one-time-sintered grain-boundary-layer ceramic substrate
The invention discloses a preparation method for a low-temperature-one-time-sintered grain-boundary-layer ceramic substrate. The method comprises the following specific preparation steps: carrying out ingredient ball-milling, carrying out tape-casting, carrying out degumming, carrying out sintering and carrying out a surface treatment process. The grain-boundary-layer ceramic substrate prepared by the steps has the following advantages that only one-time sintering is required, the sintering temperature is very low, and the energy consumption is low; an advanced tape-casting and laminating process is adopted, and thin substrates, of which the thickness is minimized to 0.1mm and the size is greater than 30mm*30mm, can be prepared and can be used for preparing single-layer sheet-type porcelain capacitors; and a one-time-sintering method is adopted, so that the prepared ceramic substrate material is large in dielectric constant and very low in dielectric loss, and the consistency of the material is relatively good.
Preparation method for low-temperature-one-time-sintered grain-boundary-layer ceramic substrate
The invention discloses a preparation method for a low-temperature-one-time-sintered grain-boundary-layer ceramic substrate. The method comprises the following specific preparation steps: carrying out ingredient ball-milling, carrying out tape-casting, carrying out degumming, carrying out sintering and carrying out a surface treatment process. The grain-boundary-layer ceramic substrate prepared by the steps has the following advantages that only one-time sintering is required, the sintering temperature is very low, and the energy consumption is low; an advanced tape-casting and laminating process is adopted, and thin substrates, of which the thickness is minimized to 0.1mm and the size is greater than 30mm*30mm, can be prepared and can be used for preparing single-layer sheet-type porcelain capacitors; and a one-time-sintering method is adopted, so that the prepared ceramic substrate material is large in dielectric constant and very low in dielectric loss, and the consistency of the material is relatively good.
Preparation method for low-temperature-one-time-sintered grain-boundary-layer ceramic substrate
PANG JINBIAO (author) / LI CHENGFENG (author) / DU YULONG (author) / ZHANG XIU (author) / HAN YUCHENG (author) / ZHANG DUO (author) / YANG HUAYUAN (author)
2016-02-10
Patent
Electronic Resource
English
| European Patent Office | 2024
| European Patent Office | 2020
| European Patent Office | 2024
| European Patent Office | 2024
| European Patent Office | 2024