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Preparation method and application of grain boundary layer ceramic material and grain boundary layer ceramic substrate
The invention provides a preparation method and application of a grain boundary layer ceramic material and a grain boundary layer ceramic substrate, and belongs to the technical field of chip capacitors. The grain boundary layer ceramic material provided by the invention is prepared from the following preparation raw materials in parts by mass: 95.35 to 99.30 parts of SrTiO3, 0.30 to 0.55 part ofNb2O3 and 0.30 to 5.00 part of a modification additive comprising one or more of BaCO3, Nd2O3, CaO, Sm2O3, Al2O3 and SiO2. The grain boundary layer ceramic material has excellent electrical propertiesand controllability, and a grain boundary layer ceramic substrate prepared from the grain boundary layer ceramic material has excellent repeatability and consistency.
本发明提供了一种晶界层陶瓷材料、晶界层陶瓷基片的制备方法及其应用，属于芯片电容器技术领域。本发明提供的晶界层陶瓷材料包括以下质量份数的制备原料：SrTiO395.35～99.30份、Nb2O30.30～0.55份和改性添加剂0.30～5.00份；所述改性添加剂为BaCO3、Nd2O3、CaO、Sm2O3、Al2O3和SiO2中的一种或几种。本发明提供的晶界层陶瓷材料具有优异的电性能和可控性，由该晶界层陶瓷材料制备的晶界层陶瓷基片具有优良的重复性和一致性。
Preparation method and application of grain boundary layer ceramic material and grain boundary layer ceramic substrate
The invention provides a preparation method and application of a grain boundary layer ceramic material and a grain boundary layer ceramic substrate, and belongs to the technical field of chip capacitors. The grain boundary layer ceramic material provided by the invention is prepared from the following preparation raw materials in parts by mass: 95.35 to 99.30 parts of SrTiO3, 0.30 to 0.55 part ofNb2O3 and 0.30 to 5.00 part of a modification additive comprising one or more of BaCO3, Nd2O3, CaO, Sm2O3, Al2O3 and SiO2. The grain boundary layer ceramic material has excellent electrical propertiesand controllability, and a grain boundary layer ceramic substrate prepared from the grain boundary layer ceramic material has excellent repeatability and consistency.
本发明提供了一种晶界层陶瓷材料、晶界层陶瓷基片的制备方法及其应用，属于芯片电容器技术领域。本发明提供的晶界层陶瓷材料包括以下质量份数的制备原料：SrTiO395.35～99.30份、Nb2O30.30～0.55份和改性添加剂0.30～5.00份；所述改性添加剂为BaCO3、Nd2O3、CaO、Sm2O3、Al2O3和SiO2中的一种或几种。本发明提供的晶界层陶瓷材料具有优异的电性能和可控性，由该晶界层陶瓷材料制备的晶界层陶瓷基片具有优良的重复性和一致性。
Preparation method and application of grain boundary layer ceramic material and grain boundary layer ceramic substrate
一种晶界层陶瓷材料、晶界层陶瓷基片的制备方法及其应用
FENG YILONG (author) / LYU MING (author) / LU ZHENYA (author) / CHEN WEIHAO (author)
2020-11-10
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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