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Gallium nitride molded article, method for producing same, and gallium nitride sputtering target
The present invention provides a gallium nitride molded article which have high density and low oxygen content without using a special apparatus, a method for producing the same and a gallium nitride sputtering target. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga + N), of 55% to 80%, can be obtained.
Gallium nitride molded article, method for producing same, and gallium nitride sputtering target
The present invention provides a gallium nitride molded article which have high density and low oxygen content without using a special apparatus, a method for producing the same and a gallium nitride sputtering target. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga + N), of 55% to 80%, can be obtained.
Gallium nitride molded article, method for producing same, and gallium nitride sputtering target
MESUDA MASAMI (author) / MATSUMARU KEITARO (author) / TAKAHASHI KOYATA (author) / KIKUCHI RYOU (author) / SHIBUTAMI TETSUO (author)
2016-02-24
Patent
Electronic Resource
English
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