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Preparation method of medium-voltage gradient zinc oxide piezoresistor MOV chip
The invention discloses a preparation method of a medium-voltage gradient zinc oxide piezoresistor MOV chip. The preparation method comprises the following steps: (1) preparing raw materials: zinc oxide, bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, nickel oxide, aluminum nitrate and silver nitrate; (2) mixing and grinding a doping material; (3) carrying out continuous ball milling; (4) spraying, drying, and granulating; (5) forming; (6) discharging glue; (7) sintering; (8) carrying out ball-milling and cleaning on the black bare chip; (9) carrying out annealing heat treatmenton the product; (10) coating with silver to form a conductive electrode, and reducing the conductive electrode; (11) coating the side surface with an insulating glaze; (12) welding a copper conductingwire electrode; and (13) packaging, and encapsulating to obtain the product. According to the invention, the piezoresistor can improve the power frequency voltage/current tolerance time under the same voltage gradient so as to provide enough tripping action time for a thermal tripping device of a surge protection device SPD.
本发明公开了一种中电压梯度氧化锌压敏电阻MOV芯片的制备方法，包括以下步骤：原料准备：氧化锌，氧化铋，氧化锑，氧化钴，氧化锰，氧化镍，硝酸铝，硝酸银；（2）掺杂料混磨；（3）续球磨；（4）喷雾、干燥、造粒；（5）成型；（6）排胶；（7）烧结；(8）黑裸片球磨清洗；（9）产品退火热处理；（10）被银导电电极，还原导电电极；（11）上侧面绝缘釉；（12）焊接铜导线电极；（13）封装、灌封，得到产品。本发明的压敏电阻可以在同一电压梯度下，提高工频电压/电流耐受时间，为电涌保护器SPD的热脱离装置赢得足够的脱扣动作时间。
Preparation method of medium-voltage gradient zinc oxide piezoresistor MOV chip
The invention discloses a preparation method of a medium-voltage gradient zinc oxide piezoresistor MOV chip. The preparation method comprises the following steps: (1) preparing raw materials: zinc oxide, bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, nickel oxide, aluminum nitrate and silver nitrate; (2) mixing and grinding a doping material; (3) carrying out continuous ball milling; (4) spraying, drying, and granulating; (5) forming; (6) discharging glue; (7) sintering; (8) carrying out ball-milling and cleaning on the black bare chip; (9) carrying out annealing heat treatmenton the product; (10) coating with silver to form a conductive electrode, and reducing the conductive electrode; (11) coating the side surface with an insulating glaze; (12) welding a copper conductingwire electrode; and (13) packaging, and encapsulating to obtain the product. According to the invention, the piezoresistor can improve the power frequency voltage/current tolerance time under the same voltage gradient so as to provide enough tripping action time for a thermal tripping device of a surge protection device SPD.
本发明公开了一种中电压梯度氧化锌压敏电阻MOV芯片的制备方法，包括以下步骤：原料准备：氧化锌，氧化铋，氧化锑，氧化钴，氧化锰，氧化镍，硝酸铝，硝酸银；（2）掺杂料混磨；（3）续球磨；（4）喷雾、干燥、造粒；（5）成型；（6）排胶；（7）烧结；(8）黑裸片球磨清洗；（9）产品退火热处理；（10）被银导电电极，还原导电电极；（11）上侧面绝缘釉；（12）焊接铜导线电极；（13）封装、灌封，得到产品。本发明的压敏电阻可以在同一电压梯度下，提高工频电压/电流耐受时间，为电涌保护器SPD的热脱离装置赢得足够的脱扣动作时间。
Preparation method of medium-voltage gradient zinc oxide piezoresistor MOV chip
一种中电压梯度氧化锌压敏电阻MOV芯片的制备方法
SHI GUONENG (author) / ZHANG QI (author) / YUE TAO (author)
2020-04-17
Patent
Electronic Resource
Chinese
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