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Zinc oxide piezoresistor material with high electric potential gradient
The invention discloses a zinc oxide piezoresistor material with a high electric potential gradient and belongs to the field of semiconductor electronic materials. The zinc oxide piezoresistor material is characterized in that nanoscale zinc oxide is taken as a main body, is added with micron-sized additives including bismuth oxide, antimony oxide, chromic oxide and cobalt oxide, is also added with a trace amount of manganese dioxide and 2-3 types of rare-earth oxides; all the components are fully mixed, dried, pre-roasted, granulated, compression-molded and then subjected to low-temperature glue discharging and high-temperature sintering to prepare a zinc oxide resistor valve plate, wherein the zinc oxide resistor valve plate is small in average grain size (less than 4 microns), has an electric potential gradient between 750V/mm and 1150V/mm, has a nonlinear coefficient being greater than 25, has leak current being smaller than 5 microamps and also has excellent electrical properties.
Zinc oxide piezoresistor material with high electric potential gradient
The invention discloses a zinc oxide piezoresistor material with a high electric potential gradient and belongs to the field of semiconductor electronic materials. The zinc oxide piezoresistor material is characterized in that nanoscale zinc oxide is taken as a main body, is added with micron-sized additives including bismuth oxide, antimony oxide, chromic oxide and cobalt oxide, is also added with a trace amount of manganese dioxide and 2-3 types of rare-earth oxides; all the components are fully mixed, dried, pre-roasted, granulated, compression-molded and then subjected to low-temperature glue discharging and high-temperature sintering to prepare a zinc oxide resistor valve plate, wherein the zinc oxide resistor valve plate is small in average grain size (less than 4 microns), has an electric potential gradient between 750V/mm and 1150V/mm, has a nonlinear coefficient being greater than 25, has leak current being smaller than 5 microamps and also has excellent electrical properties.
Zinc oxide piezoresistor material with high electric potential gradient
ZHU DACHUAN (author) / YANG CHEN (author) / TU MINGJING (author)
2015-04-01
Patent
Electronic Resource
English
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