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The invention discloses an aluminum-based silicon carbide high-density packaged semiconductor composite material. The method comprises the following steps: firstly, preparing SiC slurry with the solidcontent of 30-70% by using SiC micro-powder, then adding gold powder, silver powder and palladium powder according to the mass ratio of SiC to Au to Ag to Pd of (50-60): (0.3-0.6): 1: (0.02-0.05), and uniformly mixing to obtain SiC composite slurry; performing tape casting: defoaming and uniformly mixing the obtained SiC composite slurry, and carrying out tape casting to obtain a SiC composite cast film; carrying out biscuiting on the cast film, and carrying out biscuiting on the obtained cast film to obtain a SiC composite biscuit; and performing vacuum sintering, specifically, the SiC composite biscuit is sintered in a vacuum state, and the aluminum-based silicon carbide is obtained. The preparation method has the beneficial effects that the aluminum-based aluminum nitride is prepared by adopting a gel casting method, the process is simple, the obtained product is uniform in component distribution, low in porosity and excellent in semiconductor performance, the sintering performanceis fully improved by introducing gold, silver and palladium powder, the sintering temperature is further reduced, energy is saved, and the environment is protected.
一种铝基碳化硅高密度封装半导体复合材料，包含如下步骤：制备SiC复合浆料，首先使用SiC微粉配制得到固含量为30‑70%的SiC浆料，然后按照SiC∶Au∶Ag：Pd为（50‑60）∶（0.3‑0.6）∶1：（0.02‑0.05）的质量比加入金粉和银粉和钯粉，混合均匀，得到SiC复合浆料；流延成型，对得到的SiC复合浆料除泡混合均匀后，进行流延得到SiC复合流延膜；流延膜素烧，对得到的流延膜进行素烧，得到SiC复合素坯；真空烧结，将SiC符合素坯在真空状态下烧结，得到铝基碳化硅。本发明的有益效果：通过采用凝胶流延法制备铝基氮化铝，工艺简单，得到的产品成分分布均匀，气孔率低，半导体性能优越，且通过引入金、银和钯粉，充分改善烧结性能，进一步降低烧结温度，节能环保。
The invention discloses an aluminum-based silicon carbide high-density packaged semiconductor composite material. The method comprises the following steps: firstly, preparing SiC slurry with the solidcontent of 30-70% by using SiC micro-powder, then adding gold powder, silver powder and palladium powder according to the mass ratio of SiC to Au to Ag to Pd of (50-60): (0.3-0.6): 1: (0.02-0.05), and uniformly mixing to obtain SiC composite slurry; performing tape casting: defoaming and uniformly mixing the obtained SiC composite slurry, and carrying out tape casting to obtain a SiC composite cast film; carrying out biscuiting on the cast film, and carrying out biscuiting on the obtained cast film to obtain a SiC composite biscuit; and performing vacuum sintering, specifically, the SiC composite biscuit is sintered in a vacuum state, and the aluminum-based silicon carbide is obtained. The preparation method has the beneficial effects that the aluminum-based aluminum nitride is prepared by adopting a gel casting method, the process is simple, the obtained product is uniform in component distribution, low in porosity and excellent in semiconductor performance, the sintering performanceis fully improved by introducing gold, silver and palladium powder, the sintering temperature is further reduced, energy is saved, and the environment is protected.
一种铝基碳化硅高密度封装半导体复合材料，包含如下步骤：制备SiC复合浆料，首先使用SiC微粉配制得到固含量为30‑70%的SiC浆料，然后按照SiC∶Au∶Ag：Pd为（50‑60）∶（0.3‑0.6）∶1：（0.02‑0.05）的质量比加入金粉和银粉和钯粉，混合均匀，得到SiC复合浆料；流延成型，对得到的SiC复合浆料除泡混合均匀后，进行流延得到SiC复合流延膜；流延膜素烧，对得到的流延膜进行素烧，得到SiC复合素坯；真空烧结，将SiC符合素坯在真空状态下烧结，得到铝基碳化硅。本发明的有益效果：通过采用凝胶流延法制备铝基氮化铝，工艺简单，得到的产品成分分布均匀，气孔率低，半导体性能优越，且通过引入金、银和钯粉，充分改善烧结性能，进一步降低烧结温度，节能环保。
Aluminum-based silicon carbide high-density packaged semiconductor composite material
一种铝基碳化硅高密度封装半导体复合材料
TIAN PENG (author)
2020-05-05
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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