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Silicon carbide infrared radiation ceramic material and preparation method thereof
The invention relates to a silicon carbide infrared radiation ceramic material and a preparation method thereof. The silicon carbide infrared radiation ceramic material is prepared from the followingraw materials: beta-SiC and MgO-Al2O3-SiO2 auxiliary agent, preferably, the silicon carbide infrared radiation ceramic material comprises in percentage by weight: 76.5 to 95 percent of beta-SiC, 0 to8.5 percent of AlN and 5 to 15 percent of the MgO-Al2O3-SiO2 auxiliary agent, and the sum of the contents of the components is 100 percent by weight.
本发明涉及一种碳化硅红外辐射陶瓷材料及其制备方法，所述碳化硅红外辐射陶瓷材料的原料组成包括：‑SiC和MgO‑AlO‑SiO助剂；优选包括：76.5～95wt%β‑SiC、0～8.5wt%AlN、5～15wt%MgO‑AlO‑SiO助剂，各组分含量之和为100wt%。
Silicon carbide infrared radiation ceramic material and preparation method thereof
The invention relates to a silicon carbide infrared radiation ceramic material and a preparation method thereof. The silicon carbide infrared radiation ceramic material is prepared from the followingraw materials: beta-SiC and MgO-Al2O3-SiO2 auxiliary agent, preferably, the silicon carbide infrared radiation ceramic material comprises in percentage by weight: 76.5 to 95 percent of beta-SiC, 0 to8.5 percent of AlN and 5 to 15 percent of the MgO-Al2O3-SiO2 auxiliary agent, and the sum of the contents of the components is 100 percent by weight.
本发明涉及一种碳化硅红外辐射陶瓷材料及其制备方法，所述碳化硅红外辐射陶瓷材料的原料组成包括：‑SiC和MgO‑AlO‑SiO助剂；优选包括：76.5～95wt%β‑SiC、0～8.5wt%AlN、5～15wt%MgO‑AlO‑SiO助剂，各组分含量之和为100wt%。
Silicon carbide infrared radiation ceramic material and preparation method thereof
一种碳化硅红外辐射陶瓷材料及其制备方法
CHEN JIAN (author) / ZHU MING (author) / HUANG ZHENGREN (author) / ZHU YUNZHOU (author) / YAO XIUMIN (author) / CHEN ZHONGMING (author) / LIU XUEJIAN (author)
2020-05-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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