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Silicon carbide infrared radiation ceramic material and preparation method thereof
The invention relates to a silicon carbide infrared radiation ceramic material and a preparation method thereof. The silicon carbide infrared radiation ceramic material is prepared from the followingraw materials: beta-SiC and MgO-Al2O3-SiO2 auxiliary agent, preferably, the silicon carbide infrared radiation ceramic material comprises in percentage by weight: 76.5 to 95 percent of beta-SiC, 0 to8.5 percent of AlN and 5 to 15 percent of the MgO-Al2O3-SiO2 auxiliary agent, and the sum of the contents of the components is 100 percent by weight.
本发明涉及一种碳化硅红外辐射陶瓷材料及其制备方法,所述碳化硅红外辐射陶瓷材料的原料组成包括:‑SiC和MgO‑AlO‑SiO助剂;优选包括:76.5~95wt%β‑SiC、0~8.5wt%AlN、5~15wt%MgO‑AlO‑SiO助剂,各组分含量之和为100wt%。
Silicon carbide infrared radiation ceramic material and preparation method thereof
The invention relates to a silicon carbide infrared radiation ceramic material and a preparation method thereof. The silicon carbide infrared radiation ceramic material is prepared from the followingraw materials: beta-SiC and MgO-Al2O3-SiO2 auxiliary agent, preferably, the silicon carbide infrared radiation ceramic material comprises in percentage by weight: 76.5 to 95 percent of beta-SiC, 0 to8.5 percent of AlN and 5 to 15 percent of the MgO-Al2O3-SiO2 auxiliary agent, and the sum of the contents of the components is 100 percent by weight.
本发明涉及一种碳化硅红外辐射陶瓷材料及其制备方法,所述碳化硅红外辐射陶瓷材料的原料组成包括:‑SiC和MgO‑AlO‑SiO助剂;优选包括:76.5~95wt%β‑SiC、0~8.5wt%AlN、5~15wt%MgO‑AlO‑SiO助剂,各组分含量之和为100wt%。
Silicon carbide infrared radiation ceramic material and preparation method thereof
一种碳化硅红外辐射陶瓷材料及其制备方法
CHEN JIAN (Autor:in) / ZHU MING (Autor:in) / HUANG ZHENGREN (Autor:in) / ZHU YUNZHOU (Autor:in) / YAO XIUMIN (Autor:in) / CHEN ZHONGMING (Autor:in) / LIU XUEJIAN (Autor:in)
19.05.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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