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Preparation method of high-thermal-conductivity silicon nitride substrate
The invention discloses a preparation method of a high-thermal-conductivity silicon nitride substrate, which belongs to the technical field of ceramic material preparation. Silicon nitride powder is adopted as a raw material, rare earth oxide and alkaline earth metal oxide are added to serve as a mixed sintering aid, the adding amount is 6 wt%-10 wt%, a high-molecular compound is added, ball milling and mixing are conducted in an organic solvent, and slurry is formed. Tape casting is carried out to form a green body, presintering of the green body in nitrogen at 1400-1600 DEG C for 1-5 hours is conducted, and heat preservation in an air pressure sintering furnace at 1800-2000 DEG C for 2-10 hours is carried out under the nitrogen pressure of 0.5-3 MPa. The silicon nitride powder used in the invention is high-purity alpha-phase silicon nitride, has very high specific surface area and high sintering activity, and can effectively reduce the densification temperature. The added high-molecular carbon-containing compound is a multi-component compound and is degreased and pre-sintered in an inert atmosphere, so that the thermal conductivity of the product can be improved. The thermal conductivity of the prepared silicon nitride ceramic substrate is not lower than 90 W/m.K, and the bending strength is not lower than 800 MPa.
本发明公开了一种高导热氮化硅基板的制备方法。属于陶瓷材料制备技术领域。本发明采用氮化硅粉末为原料，添加稀土氧化物和碱土金属氧化物作为混合烧结助剂，加入量为6wt％～10wt％，加入高分子化合物并在有机溶剂中球磨混合形成浆料。经流延成形为坯体，在氮气中1400℃～1600℃下预烧结1‑5h，再在气压烧结炉中1800℃～2000℃保温2‑10h，其氮气压力为0.5‑3MPa。本发明使用的氮化硅粉末为高纯α相氮化硅，具有很高的比表面积和高的烧结活性，能够有效降低致密化温度。加入的高分子含碳化合物为多组元，在惰性气氛中进行脱脂和预烧结，可提高制品热导率。制备的氮化硅陶瓷基板热导率不低于90W/m·K，抗弯强度不低于800MPa。
Preparation method of high-thermal-conductivity silicon nitride substrate
The invention discloses a preparation method of a high-thermal-conductivity silicon nitride substrate, which belongs to the technical field of ceramic material preparation. Silicon nitride powder is adopted as a raw material, rare earth oxide and alkaline earth metal oxide are added to serve as a mixed sintering aid, the adding amount is 6 wt%-10 wt%, a high-molecular compound is added, ball milling and mixing are conducted in an organic solvent, and slurry is formed. Tape casting is carried out to form a green body, presintering of the green body in nitrogen at 1400-1600 DEG C for 1-5 hours is conducted, and heat preservation in an air pressure sintering furnace at 1800-2000 DEG C for 2-10 hours is carried out under the nitrogen pressure of 0.5-3 MPa. The silicon nitride powder used in the invention is high-purity alpha-phase silicon nitride, has very high specific surface area and high sintering activity, and can effectively reduce the densification temperature. The added high-molecular carbon-containing compound is a multi-component compound and is degreased and pre-sintered in an inert atmosphere, so that the thermal conductivity of the product can be improved. The thermal conductivity of the prepared silicon nitride ceramic substrate is not lower than 90 W/m.K, and the bending strength is not lower than 800 MPa.
本发明公开了一种高导热氮化硅基板的制备方法。属于陶瓷材料制备技术领域。本发明采用氮化硅粉末为原料，添加稀土氧化物和碱土金属氧化物作为混合烧结助剂，加入量为6wt％～10wt％，加入高分子化合物并在有机溶剂中球磨混合形成浆料。经流延成形为坯体，在氮气中1400℃～1600℃下预烧结1‑5h，再在气压烧结炉中1800℃～2000℃保温2‑10h，其氮气压力为0.5‑3MPa。本发明使用的氮化硅粉末为高纯α相氮化硅，具有很高的比表面积和高的烧结活性，能够有效降低致密化温度。加入的高分子含碳化合物为多组元，在惰性气氛中进行脱脂和预烧结，可提高制品热导率。制备的氮化硅陶瓷基板热导率不低于90W/m·K，抗弯强度不低于800MPa。
Preparation method of high-thermal-conductivity silicon nitride substrate
一种高导热氮化硅基板的制备方法
WANG YUELONG (author) / TIAN JIANJUN (author) / QIN MINGLI (author) / WU HAOYANG (author) / JIA BAORUI (author) / LIU CHANG (author) / ZHANG LIN (author) / QU XUANHUI (author)
2020-05-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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