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High-thermal-conductivity silicon nitride substrate and preparation method thereof
The invention relates to the technical field of silicon nitride material preparation, in particular to a high-thermal-conductivity silicon nitride substrate and a preparation method thereof. Nano carbon powder, nano silicon dioxide, nano magnesium oxide and nano yttrium oxide are adopted as raw materials and are subjected to ball milling with a solvent and a hyperdispersant to obtain a suspension, an adhesive and a plasticizer are added into the suspension, secondary ball milling is performed, and slurry is obtained; next, a thin plate green body is prepared through a tape casting technology, then glue discharging is conducted in the nitrogen atmosphere, and finally the silicon nitride substrate is prepared through an air pressure sintering technology. The silicon nitride substrate prepared by the invention has high heat-conducting property and excellent mechanical property.
本发明涉及氮化硅材料制备技术领域，具体为一种高导热氮化硅基板及其制备方法。本发明采用纳米碳粉、纳米二氧化硅、纳米氧化镁和纳米氧化钇作为原料，并与溶剂、超分散剂进行球磨，得到悬浮液，向悬浮液中加入黏结剂和塑性剂，进行二次球磨，得到浆料；接着，通过流延成型工艺制得薄板生胚，然后在氮气氛围中进行排胶，最后采用气压烧结工艺，制得氮化硅基板。本发明制备的氮化硅基板具有高导热性能，同时具有优异的力学性能。
High-thermal-conductivity silicon nitride substrate and preparation method thereof
The invention relates to the technical field of silicon nitride material preparation, in particular to a high-thermal-conductivity silicon nitride substrate and a preparation method thereof. Nano carbon powder, nano silicon dioxide, nano magnesium oxide and nano yttrium oxide are adopted as raw materials and are subjected to ball milling with a solvent and a hyperdispersant to obtain a suspension, an adhesive and a plasticizer are added into the suspension, secondary ball milling is performed, and slurry is obtained; next, a thin plate green body is prepared through a tape casting technology, then glue discharging is conducted in the nitrogen atmosphere, and finally the silicon nitride substrate is prepared through an air pressure sintering technology. The silicon nitride substrate prepared by the invention has high heat-conducting property and excellent mechanical property.
本发明涉及氮化硅材料制备技术领域，具体为一种高导热氮化硅基板及其制备方法。本发明采用纳米碳粉、纳米二氧化硅、纳米氧化镁和纳米氧化钇作为原料，并与溶剂、超分散剂进行球磨，得到悬浮液，向悬浮液中加入黏结剂和塑性剂，进行二次球磨，得到浆料；接着，通过流延成型工艺制得薄板生胚，然后在氮气氛围中进行排胶，最后采用气压烧结工艺，制得氮化硅基板。本发明制备的氮化硅基板具有高导热性能，同时具有优异的力学性能。
High-thermal-conductivity silicon nitride substrate and preparation method thereof
一种高导热氮化硅基板及其制备方法
WU JI (author) / XIONG XUELIAN (author)
2024-08-06
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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