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Pressure sintering leveling method for ceramic substrate
The invention discloses a pressure sintering leveling method for a ceramic substrate, relates to the field of electronic component manufacturing, and provides a leveling method for a ceramic substrate. The leveling method is simple and practicable and has good stability and good leveling effect. SiC with high flatness after grinding processing is used as a bottom plate and a plurality of cover plates; the bottom plate is used for supporting the ceramic substrate; the plurality of cover plates are arranged above the bottom plate and are used for pressing the ceramic substrate; a pressing blockis arranged at the uppermost part of the cover plate; the bottom plate, the cover plate, the pressing block and the ceramic substrate are placed in a box-type furnace as a whole and are subjected to heat preservation for 180 min at a temperature of 900-1350 DEG C for heating leveling; and after leveling is completed, the ceramic substrate is taken out after the furnace body is naturally cooled toa room temperature. According to the method provided by the invention, the material used by the bottom plate and the cover plates are high in bending strength, not prone to deformation, excellent in thermal shock resistance and long in service life at a high temperature, and a corundum mullite material with high specific gravity is used as a counterweight pressing block, so the leveling effect ofthe ceramic substrate is guaranteed; and the SiC material with a ground surface and high straightness is used as the bottom plate and the cover plates, so the flatness of the ceramic substrate after pressure sintering is ensured. The pressure sintering leveling method provided by the invention has the characteristics of simplicity, practicability, good stability and good leveling effect on the whole.
本发明公开了一种陶瓷基板的压烧校平方法,涉及电子元器件制造领域,提出了一种简单易行、稳定性好且校平效果好的陶瓷基板的校平方法。将经过研磨加工后具有高平整度的SiC作为底板和若干盖板,所述底板用于承托陶瓷基板,若干所述盖板设于底板的上方、且用于压住陶瓷基板,盖板最上方设有压块,将底板、盖板、压块和陶瓷基板作为整体再放置于箱式炉中,在900℃‑1350℃下保温180分钟进行加热校平,校平完成后待炉体自然冷却至室温再取出陶瓷基板。本发明的方法,底板、盖板所用的材料高温下抗弯强度高、不易变形,耐热冲击性优异,使用寿命长,用高比重的刚玉莫来石材质作为配重压块,保证了陶瓷基板的校平效果;用表面经磨加工且有高平直度的SiC材料作为底板、盖板,保证了陶瓷基板压烧后的平整度。本发明从整体上具有简单易行、稳定性好以及校平效果好的特点。
Pressure sintering leveling method for ceramic substrate
The invention discloses a pressure sintering leveling method for a ceramic substrate, relates to the field of electronic component manufacturing, and provides a leveling method for a ceramic substrate. The leveling method is simple and practicable and has good stability and good leveling effect. SiC with high flatness after grinding processing is used as a bottom plate and a plurality of cover plates; the bottom plate is used for supporting the ceramic substrate; the plurality of cover plates are arranged above the bottom plate and are used for pressing the ceramic substrate; a pressing blockis arranged at the uppermost part of the cover plate; the bottom plate, the cover plate, the pressing block and the ceramic substrate are placed in a box-type furnace as a whole and are subjected to heat preservation for 180 min at a temperature of 900-1350 DEG C for heating leveling; and after leveling is completed, the ceramic substrate is taken out after the furnace body is naturally cooled toa room temperature. According to the method provided by the invention, the material used by the bottom plate and the cover plates are high in bending strength, not prone to deformation, excellent in thermal shock resistance and long in service life at a high temperature, and a corundum mullite material with high specific gravity is used as a counterweight pressing block, so the leveling effect ofthe ceramic substrate is guaranteed; and the SiC material with a ground surface and high straightness is used as the bottom plate and the cover plates, so the flatness of the ceramic substrate after pressure sintering is ensured. The pressure sintering leveling method provided by the invention has the characteristics of simplicity, practicability, good stability and good leveling effect on the whole.
本发明公开了一种陶瓷基板的压烧校平方法,涉及电子元器件制造领域,提出了一种简单易行、稳定性好且校平效果好的陶瓷基板的校平方法。将经过研磨加工后具有高平整度的SiC作为底板和若干盖板,所述底板用于承托陶瓷基板,若干所述盖板设于底板的上方、且用于压住陶瓷基板,盖板最上方设有压块,将底板、盖板、压块和陶瓷基板作为整体再放置于箱式炉中,在900℃‑1350℃下保温180分钟进行加热校平,校平完成后待炉体自然冷却至室温再取出陶瓷基板。本发明的方法,底板、盖板所用的材料高温下抗弯强度高、不易变形,耐热冲击性优异,使用寿命长,用高比重的刚玉莫来石材质作为配重压块,保证了陶瓷基板的校平效果;用表面经磨加工且有高平直度的SiC材料作为底板、盖板,保证了陶瓷基板压烧后的平整度。本发明从整体上具有简单易行、稳定性好以及校平效果好的特点。
Pressure sintering leveling method for ceramic substrate
一种陶瓷基板的压烧校平方法
WU YUEDONG (author)
2020-06-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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