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Ternary relaxor ferroelectric film material as well as preparation method and application thereof
The invention relates to a ternary relaxor ferroelectric film material as well as preparation and application thereof. The chemical composition of the material is (1-x-y) Pb (In<1/2>Nb<1/2>)O<3-y>Pb(Mg<1/3>Nb<2/3>)O<3-x>PbTiO<3-z>Mn, wherein x=0.20-0.40, y=0.18-0.60, z=0.003-0.03; the preparation method comprises the following steps: (a) mixing MnO2, In2O3, Nb2O5, MgO, PbO and TiO2, and then sequentially carrying out ball milling, drying, sieving, presintering, granulating, tabletting and sintering, so as to obtain an Mn-PIN-PMN-PT ceramic target material; (b) sequentially putting SrTiO3 single crystal into acetone, ethanol and deionized water for ultrasonic washing, and then drying to obtain a substrate; (c) carrying out deposition treatment on the SrRuO3 ceramic target on the substrate in a laser sputtering mode, and then carrying out annealing treatment to obtain a bottom electrode; and (d) carrying out deposition treatment of the Mn-PIN-PMN-PT ceramic target material on the bottomelectrode in a laser sputtering mode, and then carrying out annealing treatment to obtain the thin film material. Compared with the prior art, the film provided by the invention has a pure perovskitestructure, excellent ferroelectric and piezoelectric properties, and relatively high Curie temperature and trigonal-tetragonal phase transition temperature.
本发明涉及一种三元系弛豫铁电薄膜材料及其制备和应用,材料的化学组成为(1‑x‑y)Pb(InNb)O‑yPb(MgNb)O‑xPbTiO‑zMn,其中x=0.20~0.40,y=0.18~0.60,z=0.003~0.03,包括以下步骤:(a)将MnO、InO、NbO、MgO、PbO和TiO混合,后依次进行球磨、烘干、过筛、预烧、造粒、压片和烧结,得到Mn‑PIN‑PMN‑PT陶瓷靶材;(b)将SrTiO单晶依次置于丙酮、乙醇和去离子水中进行超声洗涤,后干燥,得到衬底;(c)以激光溅射的方式,将SrRuO陶瓷靶在衬底上进行沉积处理,后进行退火处理,得到底电极;(d)以激光溅射的方式,将Mn‑PIN‑PMN‑PT陶瓷靶材在底电极有上进行沉积处理,后进行退火处理,得到薄膜材料。与现有技术相比,本发明的薄膜具有纯钙钛矿结构,且具有优异的铁电和压电性能,以及较高的居里温度和三方‑四方相变温度。
Ternary relaxor ferroelectric film material as well as preparation method and application thereof
The invention relates to a ternary relaxor ferroelectric film material as well as preparation and application thereof. The chemical composition of the material is (1-x-y) Pb (In<1/2>Nb<1/2>)O<3-y>Pb(Mg<1/3>Nb<2/3>)O<3-x>PbTiO<3-z>Mn, wherein x=0.20-0.40, y=0.18-0.60, z=0.003-0.03; the preparation method comprises the following steps: (a) mixing MnO2, In2O3, Nb2O5, MgO, PbO and TiO2, and then sequentially carrying out ball milling, drying, sieving, presintering, granulating, tabletting and sintering, so as to obtain an Mn-PIN-PMN-PT ceramic target material; (b) sequentially putting SrTiO3 single crystal into acetone, ethanol and deionized water for ultrasonic washing, and then drying to obtain a substrate; (c) carrying out deposition treatment on the SrRuO3 ceramic target on the substrate in a laser sputtering mode, and then carrying out annealing treatment to obtain a bottom electrode; and (d) carrying out deposition treatment of the Mn-PIN-PMN-PT ceramic target material on the bottomelectrode in a laser sputtering mode, and then carrying out annealing treatment to obtain the thin film material. Compared with the prior art, the film provided by the invention has a pure perovskitestructure, excellent ferroelectric and piezoelectric properties, and relatively high Curie temperature and trigonal-tetragonal phase transition temperature.
本发明涉及一种三元系弛豫铁电薄膜材料及其制备和应用,材料的化学组成为(1‑x‑y)Pb(InNb)O‑yPb(MgNb)O‑xPbTiO‑zMn,其中x=0.20~0.40,y=0.18~0.60,z=0.003~0.03,包括以下步骤:(a)将MnO、InO、NbO、MgO、PbO和TiO混合,后依次进行球磨、烘干、过筛、预烧、造粒、压片和烧结,得到Mn‑PIN‑PMN‑PT陶瓷靶材;(b)将SrTiO单晶依次置于丙酮、乙醇和去离子水中进行超声洗涤,后干燥,得到衬底;(c)以激光溅射的方式,将SrRuO陶瓷靶在衬底上进行沉积处理,后进行退火处理,得到底电极;(d)以激光溅射的方式,将Mn‑PIN‑PMN‑PT陶瓷靶材在底电极有上进行沉积处理,后进行退火处理,得到薄膜材料。与现有技术相比,本发明的薄膜具有纯钙钛矿结构,且具有优异的铁电和压电性能,以及较高的居里温度和三方‑四方相变温度。
Ternary relaxor ferroelectric film material as well as preparation method and application thereof
一种三元系弛豫铁电薄膜材料及其制备方法和应用
WANG FEIFEI (author) / LI ZIHAO (author) / WANG YUCHUN (author) / ZHAO XIANGYONG (author) / WANG TAO (author) / TANG YANXUE (author) / DUAN ZHIHUA (author) / SHI WANGZHOU (author)
2020-07-17
Patent
Electronic Resource
Chinese
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