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Method for connecting polysilazane ceramic precursor with silicon carbide ceramic
The invention belongs to the field of ceramic materials, and discloses a method for connecting a polysilazane ceramic precursor with silicon carbide ceramic. The method comprises the following steps:taking a polysilazane precursor as a connecting raw material, smearing polysilazane at the joint of the silicon carbide ceramic; putting an obtained sample into a graphite crucible; applying a certainpressure right above the sample; putting the sample into a tubular furnace with the model of Zhonghuan technology 1600 DEG C; introducing nitrogen as a protective atmosphere; in inert gas atmosphere,heating to a low temperature of 300 DEG C at a heating rate of 5 DEG C/min, and carrying out cross-linking curing and thermal insulation treatment for 1 h; then carrying out heating sintering and heat preservation treatment, increasing the temperature to 1000 DEG C at the heating rate of 5 DEG C/min, then increasing the temperature to 1200 DEG C at the heating rate of 3 DEG C/min, finally increasing the temperature to 1300 DEG C or 1400 DEG C or 1500 DEG C at the heating rate of 2 DEG C/min, and carrying out heat preservation for 2 h. The method is simple to operate, and the sample can obtainhigher connection strength.
本发明属于陶瓷材料领域，公开了一种聚硅氮烷陶瓷前驱体连接碳化硅陶瓷的方法。该方法是以聚硅氮烷前驱体为连接原料，将聚硅氮烷涂抹在碳化硅陶瓷连接处，将样品放在石墨坩埚中，在样品正上方一定的压力，将样品放入中环科技1600℃型号的管式炉中，并通以氮气作为保护气氛，在惰性气体气氛下，先以5℃/min升温速率升至低温300℃进行交联固化与保温处理1h，随后再进行升温烧结与保温处理，以速率为5℃/min升温速率升温至1000℃，然后以3℃/min升温速率升温至1200℃，最后以2℃/min升温速率升温至1300℃、1400℃或1500℃，并保温2h。该方法操作简单，且样品可获得较高的连接强度。
Method for connecting polysilazane ceramic precursor with silicon carbide ceramic
The invention belongs to the field of ceramic materials, and discloses a method for connecting a polysilazane ceramic precursor with silicon carbide ceramic. The method comprises the following steps:taking a polysilazane precursor as a connecting raw material, smearing polysilazane at the joint of the silicon carbide ceramic; putting an obtained sample into a graphite crucible; applying a certainpressure right above the sample; putting the sample into a tubular furnace with the model of Zhonghuan technology 1600 DEG C; introducing nitrogen as a protective atmosphere; in inert gas atmosphere,heating to a low temperature of 300 DEG C at a heating rate of 5 DEG C/min, and carrying out cross-linking curing and thermal insulation treatment for 1 h; then carrying out heating sintering and heat preservation treatment, increasing the temperature to 1000 DEG C at the heating rate of 5 DEG C/min, then increasing the temperature to 1200 DEG C at the heating rate of 3 DEG C/min, finally increasing the temperature to 1300 DEG C or 1400 DEG C or 1500 DEG C at the heating rate of 2 DEG C/min, and carrying out heat preservation for 2 h. The method is simple to operate, and the sample can obtainhigher connection strength.
本发明属于陶瓷材料领域，公开了一种聚硅氮烷陶瓷前驱体连接碳化硅陶瓷的方法。该方法是以聚硅氮烷前驱体为连接原料，将聚硅氮烷涂抹在碳化硅陶瓷连接处，将样品放在石墨坩埚中，在样品正上方一定的压力，将样品放入中环科技1600℃型号的管式炉中，并通以氮气作为保护气氛，在惰性气体气氛下，先以5℃/min升温速率升至低温300℃进行交联固化与保温处理1h，随后再进行升温烧结与保温处理，以速率为5℃/min升温速率升温至1000℃，然后以3℃/min升温速率升温至1200℃，最后以2℃/min升温速率升温至1300℃、1400℃或1500℃，并保温2h。该方法操作简单，且样品可获得较高的连接强度。
Method for connecting polysilazane ceramic precursor with silicon carbide ceramic
一种聚硅氮烷陶瓷前驱体连接碳化硅陶瓷的方法
CHENG YANLING (author) / YANG SHENGKAI (author) / LI KEXU (author) / LEI JUN (author) / ZHANG HAINAN (author) / WEI SHIHONG (author)
2020-07-31
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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