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Method for connecting polysilazane with silicon carbide
The invention belongs to the field of ceramic materials, and discloses a method for connecting polysilazane with silicon carbide. The method comprises the steps of smearing polysilazane on cleaned non-pressure silicon carbide substrates, then stacking two non-pressure silicon carbide substrates smeared with the polysilazane together in a smearing mode, and placing in a graphite crucible, applying 0.1 N axial force to a sample, heating the sample to 140 DEG C at the heating rate of 1 DEG C/min in the air environment, conducting heat preservation for 16-28 h, and conducting cross-linking curing; and placing a cross-linked and cured sample in a tubular furnace, applying 0.1 N axial force to the sample in a nitrogen atmosphere, heating to 240 DEG C at a heating rate of 1 DEG C/min, keeping the temperature for 1 h, then heating to 500 DEG C at the heating rate of 1 DEG C/min, keeping the temperature for 1 h, finally heating to 1300 DEG C at the heating rate of 1 DEG C/min, keeping the temperature for 2 h, and carrying out high-temperature sintering. The experimental connection method is simple to operate, and the sample can obtain higher connection strength.
本发明属于陶瓷材料领域，公开了一种聚硅氮烷连接碳化硅的方法。该方法是将聚硅氮烷涂抹在清洗过的无压碳化硅基底上，然后将两块涂抹了聚硅氮烷的无压碳化硅基底以涂抹叠放在一起，放在石墨坩埚中，对样品施加0.1N轴向力，空气环境下，以1℃/min升温速率，加热至140℃保温16‑28h，进行交联固化；交联固化后的样品置于管式炉中，氮气气氛下，对样品施加0.1N轴向力，以速率为1℃/min升温速率升温至240℃，保温1h，然后以1℃/min升温速率升温至500℃，保温1h，最后以1℃/min升温速率升温至1300℃，并保温2h进行高温烧结。本实验连接方法操作简单，且样品可获得较高的连接强度。
Method for connecting polysilazane with silicon carbide
The invention belongs to the field of ceramic materials, and discloses a method for connecting polysilazane with silicon carbide. The method comprises the steps of smearing polysilazane on cleaned non-pressure silicon carbide substrates, then stacking two non-pressure silicon carbide substrates smeared with the polysilazane together in a smearing mode, and placing in a graphite crucible, applying 0.1 N axial force to a sample, heating the sample to 140 DEG C at the heating rate of 1 DEG C/min in the air environment, conducting heat preservation for 16-28 h, and conducting cross-linking curing; and placing a cross-linked and cured sample in a tubular furnace, applying 0.1 N axial force to the sample in a nitrogen atmosphere, heating to 240 DEG C at a heating rate of 1 DEG C/min, keeping the temperature for 1 h, then heating to 500 DEG C at the heating rate of 1 DEG C/min, keeping the temperature for 1 h, finally heating to 1300 DEG C at the heating rate of 1 DEG C/min, keeping the temperature for 2 h, and carrying out high-temperature sintering. The experimental connection method is simple to operate, and the sample can obtain higher connection strength.
本发明属于陶瓷材料领域，公开了一种聚硅氮烷连接碳化硅的方法。该方法是将聚硅氮烷涂抹在清洗过的无压碳化硅基底上，然后将两块涂抹了聚硅氮烷的无压碳化硅基底以涂抹叠放在一起，放在石墨坩埚中，对样品施加0.1N轴向力，空气环境下，以1℃/min升温速率，加热至140℃保温16‑28h，进行交联固化；交联固化后的样品置于管式炉中，氮气气氛下，对样品施加0.1N轴向力，以速率为1℃/min升温速率升温至240℃，保温1h，然后以1℃/min升温速率升温至500℃，保温1h，最后以1℃/min升温速率升温至1300℃，并保温2h进行高温烧结。本实验连接方法操作简单，且样品可获得较高的连接强度。
Method for connecting polysilazane with silicon carbide
一种聚硅氮烷连接碳化硅的方法
CHENG YANLING (author) / HUANG HAOXIAN (author) / YANG SHENGKAI (author) / LEI JUN (author) / XI XINXIN (author) / GUO WEIMING (author) / LIN HUATAI (author)
2021-09-24
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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