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PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and preparation method thereof
The invention discloses a PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and a preparation method thereof. The chemical composition of the PLZT antiferroelectric ceramic material is Pb<1-1.5x>LaZr<1-y>TiO<3>, wherein x is greater than or equal to 0.10 and less than or equal to 0.15, and y is greater than or equal to 0 and less than or equalto 0.08.
本发明公开一种高储能密度温度稳定性PLZT反铁电陶瓷材料及其制备方法。所述PLZT反铁电陶瓷材料的化学组成为PbLaZrTiO，其中，0.10≤x≤0.15，0≤y≤0.08。
PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and preparation method thereof
The invention discloses a PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and a preparation method thereof. The chemical composition of the PLZT antiferroelectric ceramic material is Pb<1-1.5x>LaZr<1-y>TiO<3>, wherein x is greater than or equal to 0.10 and less than or equal to 0.15, and y is greater than or equal to 0 and less than or equalto 0.08.
本发明公开一种高储能密度温度稳定性PLZT反铁电陶瓷材料及其制备方法。所述PLZT反铁电陶瓷材料的化学组成为PbLaZrTiO，其中，0.10≤x≤0.15，0≤y≤0.08。
PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and preparation method thereof
一种高储能密度温度稳定性PLZT反铁电陶瓷材料及其制备方法
YAN SHIGUANG (author) / CAO FEI (author) / CHEN XUEFENG (author) / WANG GENSHUI (author) / DONG XIANLIN (author)
2020-08-07
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2020
Antiferroelectric ceramic material and preparation method thereof
| European Patent Office | 2020
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