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PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and preparation method thereof

YAN SHIGUANG / CAO FEI / CHEN XUEFENG / WANG GENSHUI / DONG XIANLIN

The invention discloses a PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and a preparation method thereof. The chemical composition of the PLZT antiferroelectric ceramic material is Pb<1-1.5x>LaZr<1-y>TiO<3>, wherein x is greater than or equal to 0.10 and less than or equal to 0.15, and y is greater than or equal to 0 and less than or equalto 0.08.

本发明公开一种高储能密度温度稳定性PLZT反铁电陶瓷材料及其制备方法。所述PLZT反铁电陶瓷材料的化学组成为PbLaZrTiO，其中，0.10≤x≤0.15，0≤y≤0.08。

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PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and preparation method thereof

YAN SHIGUANG / CAO FEI / CHEN XUEFENG / WANG GENSHUI / DONG XIANLIN

The invention discloses a PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and a preparation method thereof. The chemical composition of the PLZT antiferroelectric ceramic material is Pb<1-1.5x>LaZr<1-y>TiO<3>, wherein x is greater than or equal to 0.10 and less than or equal to 0.15, and y is greater than or equal to 0 and less than or equalto 0.08.

本发明公开一种高储能密度温度稳定性PLZT反铁电陶瓷材料及其制备方法。所述PLZT反铁电陶瓷材料的化学组成为PbLaZrTiO，其中，0.10≤x≤0.15，0≤y≤0.08。

PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and preparation method thereof

YAN SHIGUANG / CAO FEI / CHEN XUEFENG / WANG GENSHUI / DONG XIANLIN

The invention discloses a PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and a preparation method thereof. The chemical composition of the PLZT antiferroelectric ceramic material is Pb<1-1.5x>LaZr<1-y>TiO<3>, wherein x is greater than or equal to 0.10 and less than or equal to 0.15, and y is greater than or equal to 0 and less than or equalto 0.08.

本发明公开一种高储能密度温度稳定性PLZT反铁电陶瓷材料及其制备方法。所述PLZT反铁电陶瓷材料的化学组成为PbLaZrTiO，其中，0.10≤x≤0.15，0≤y≤0.08。

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Titel:

PLZT antiferroelectric ceramic material with high energy storage density and temperature stability and preparation method thereof

Weitere Titelangaben:

一种高储能密度温度稳定性PLZT反铁电陶瓷材料及其制备方法

Beteiligte:

YAN SHIGUANG (Autor:in) / CAO FEI (Autor:in) / CHEN XUEFENG (Autor:in) / WANG GENSHUI (Autor:in) / DONG XIANLIN (Autor:in)

Erscheinungsdatum:

07.08.2020

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Chinesisch

Klassifikation:

IPC: C04B Kalk , LIME

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