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Titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and preparation method thereof
The invention discloses a titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and a preparation method thereof. The preparation method comprises the steps: putting asilicon carbide fiber prefabricated body in a constant-temperature area of a CVD furnace, and depositing a titanium-silicon-carbon interface layer on the surface of silicon carbide fibers through a chemical vapor infiltration method within a proper temperature range; and soaking in slurry containing polycarbosilane and titanium silicon carbon to be impregnated; and preparing the ceramic matrix composite material through a precursor impregnation pyrolysis method (PIP). The SiCf/SiC composite material containing the Ti3SiC2 interface is prepared, the process is simple, the cost is low, the dielectric constant of the wave-absorbing composite material is effectively regulated and controlled, and a good wave-absorbing effect is achieved.
本发明公开一种钛硅碳界面改性SiCf/SiC吸波复合材料及其制备方法，将碳化硅纤维预制体置于CVD炉恒温区内，在适合的温度范围内，采用化学气相渗透法在碳化硅纤维表面沉积钛硅碳界面层；然后将其置于含有聚碳硅烷和钛硅碳的浆料中进行浸渍，采用前驱体浸渍裂解法(PIP)制备陶瓷基复合材料。本发明制备出了含有TiSiC界面的SiCf/SiC复合材料，工艺简单，成本低，且有效调控了吸波复合材料的介电常数，达到良好的吸波效果。
Titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and preparation method thereof
The invention discloses a titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and a preparation method thereof. The preparation method comprises the steps: putting asilicon carbide fiber prefabricated body in a constant-temperature area of a CVD furnace, and depositing a titanium-silicon-carbon interface layer on the surface of silicon carbide fibers through a chemical vapor infiltration method within a proper temperature range; and soaking in slurry containing polycarbosilane and titanium silicon carbon to be impregnated; and preparing the ceramic matrix composite material through a precursor impregnation pyrolysis method (PIP). The SiCf/SiC composite material containing the Ti3SiC2 interface is prepared, the process is simple, the cost is low, the dielectric constant of the wave-absorbing composite material is effectively regulated and controlled, and a good wave-absorbing effect is achieved.
本发明公开一种钛硅碳界面改性SiCf/SiC吸波复合材料及其制备方法，将碳化硅纤维预制体置于CVD炉恒温区内，在适合的温度范围内，采用化学气相渗透法在碳化硅纤维表面沉积钛硅碳界面层；然后将其置于含有聚碳硅烷和钛硅碳的浆料中进行浸渍，采用前驱体浸渍裂解法(PIP)制备陶瓷基复合材料。本发明制备出了含有TiSiC界面的SiCf/SiC复合材料，工艺简单，成本低，且有效调控了吸波复合材料的介电常数，达到良好的吸波效果。
Titanium-silicon-carbon interface modified SiCf/SiC wave-absorbing composite material and preparation method thereof
一种钛硅碳界面改性SiCf/SiC吸波复合材料及其制备方法
PENG YUQING (author) / XU HAIMING (author) / WEI ZIHAN (author) / ZHU JIE (author) / LI AIJUN (author) / LIU LIQI (author) / ZHANG FANGZHOU (author) / BAI RUICHENG (author)
2020-08-28
Patent
Electronic Resource
Chinese
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