A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
PROCESS FOR MANUFACTURING SILICON CARBIDE COATED BODY
The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyl dichlorosilane (DMS) as thesilane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, andto the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.
本发明涉及一种通过在化学气相沉积方法中使用二甲基二氯硅烷(DMS)作为硅烷源在石墨基板上沉积碳化硅(SiC)来制造涂覆SiC的主体的新的工艺。本发明的另一方面涉及可通过本发明的新的工艺获得的新的涂覆碳化硅的主体，以及涉及其用于制造以下项的用途：用于高温应用、基座和反应器的制品，半导体材料和晶片。
PROCESS FOR MANUFACTURING SILICON CARBIDE COATED BODY
The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyl dichlorosilane (DMS) as thesilane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, andto the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.
本发明涉及一种通过在化学气相沉积方法中使用二甲基二氯硅烷(DMS)作为硅烷源在石墨基板上沉积碳化硅(SiC)来制造涂覆SiC的主体的新的工艺。本发明的另一方面涉及可通过本发明的新的工艺获得的新的涂覆碳化硅的主体，以及涉及其用于制造以下项的用途：用于高温应用、基座和反应器的制品，半导体材料和晶片。
PROCESS FOR MANUFACTURING SILICON CARBIDE COATED BODY
用于制造涂覆碳化硅的主体的工艺
GUERCIO PETER J (author) / WESTPHAL PAUL (author)
2020-10-20
Patent
Electronic Resource
Chinese